AFT26H200W03SR6

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AFT26H200W03SR6 is a High Voltage Power Field-effect Transistor (FET). It is from the AFT series and has been designed to operate up to 150W in the 26 to 40 GHz frequency range. The device is housed in a Lead-free package and is designed to provide high-power gain, low parasitics and high reliability.

This FET is suitable for a wide range of applications, including telecommunications, microwaves, satellite and military communications, or any application where high power and low noise are necessary. The FET is also suitable for high-efficiency power amplifiers, Switched-Mode Power Supplies (SMPSs), and other circuits that require high frequency, low noise, and high linearity.

The AFT26H200W03SR6 offers an easy-to-use solution to designers of RF circuits and systems. The device is optimized for high-performance applications such as power amplifiers, linear amplifiers, and low-noise amplifiers. The device has the capability of handling large amounts of power efficiently, without experiencing linearity issues. This makes the device a perfect choice for applications where great control and precision are required.

The AFT26H200W03SR6 can also be used for low-power applications such as pre-drivers, local oscillators and RF switching. The device is designed to handle a wide range of signals, from low power to high power, with minimal distortion. The device has an impressive gain level with very low noise and distortion. This makes it a great choice for use in all types of RF systems.

The main feature of the AFT26H200W03SR6 is its high-power operating capability and low noise performance. It has high power density, and operates at up to 150W in the 26 to 40 GHz frequency range. The device also offers an impressive level of gain, linearity and distortion. Thanks to its performance and flexibility, the AFT26H200W03SR6 is the perfect solution for use in a wide range of power amplifier applications.

The AFT26H200W03SR6 uses a Junction Gate Field-effect Transistor (JFET) architecture and works by controlling the current flow between the drain and the source electrodes. The gate terminal is used to control the current flow from the drain to the source. When the gate is positively charged, current can flow in the drain-source direction, and when it is negatively charged, the current flow is stopped. This makes the device a highly efficient way to control and adjust the amount of current flowing through the circuit.

The AFT26H200W03SR6 is designed to provide designers of RF circuits and systems with an easy-to-use solution. The device is optimized for use in applications such as power amplifiers, linear amplifiers and low-noise amplifiers. It has the capability of handling large amounts of power efficiently, without experiencing linearity issues. This makes the device a perfect choice for applications where great control and precision are required.

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