Allicdata Part #: | AFT23S170-13SR3-ND |
Manufacturer Part#: |
AFT23S170-13SR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.4GHZ NI780S-2L4S |
More Detail: | RF Mosfet LDMOS 28V 1.1A 2.4GHz 18.8dB 45W NI-780S... |
DataSheet: | AFT23S170-13SR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.4GHz |
Gain: | 18.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 45W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-6 |
Supplier Device Package: | NI-780S-6 |
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The AFT23S170-13SR3 is a low-cost, high-power, small-size, high-efficiency amplifier with excellent frequency range and performance. It is classified as an RF-type MOSFET with 50 to 200 volts DC voltage range. This amplifier is designed for fast switching, low-noise, wide bandwidth and linear power amplification applications, such as mobile telecommunication systems, radio, satellite and digital broadcasting, industrial communication, and transport radio and radar systems.
The AFT23S170-13SR3 uses a MOSFET transistor to provide a low impedance output and high dynamic power. The special structure and design of the device enables high-speed switching of signals, while providing linear power performance in a wide frequency range. This allows the amplifier to achieve high-power amplification with little or no distortion.
The transistor works by controlling the voltage and current between the source and drain terminal, a process called \'gate drive\'. The gate drive voltage controls the current flow through the device. In this manner, the AFT23S170-13SR3 can be used to control the power output of the amplifier. It can also be used to control the gain of the amplifier, as well as the frequency response of the amplifier.
The AFT23S170-13SR3 has many features, including: low noise, low distortion, high power efficiency, low power consumption, high reliability and low cost. Additionally, this device has high linearity, which is important for transmitting signals with low distortion and high clarity. This device is also known for its high frequency response and wide bandwidth. All these features make it well suited for use in many RF applications.
The AFT23S170-13SR3 can be used in a variety of applications, including broadcasting, radio communication, industrial communication and video modems. It is particularly suitable for applications that need linear power performance in a wide frequency range. This device is well suited for base station, mobile phone and terminal communication. It is also used in high power digital broadcasting equipment.
The AFT23S170-13SR3 is a high-power, low-cost MOSFET amplifier with excellent performance and frequency range. It can be used in a variety of applications, such as broadcasting, radio communication, industrial communication and video modems. Its special structure and design offer high speed switching and excellent power performance, while maintaining linearity in a wide frequency range. This makes it ideal for a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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