Allicdata Part #: | AFT20P140-4WNR3-ND |
Manufacturer Part#: |
AFT20P140-4WNR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 1.91GHZ OM780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 500mA 1.88GHz ~ 1.91GHz... |
DataSheet: | AFT20P140-4WNR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.88GHz ~ 1.91GHz |
Gain: | 17.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 24W |
Voltage - Rated: | 65V |
Package / Case: | OM780-4 |
Supplier Device Package: | OM780-4 |
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The AFT20P140-4WNR3 is an RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed specifically for high-performance radio-frequency applications. It is a power device built with a dielectrically isolated top gate, particularly suitable for wideband amplification in wideband radio systems, such as Bluetooth and Wi-Fi. This device has high gain, high linearity, and low noise, making it ideal for use in modern radio-frequency systems.
A MOSFET is an active electronic device that uses an electrical field to control current in devices. A MOSFET is composed of two or more terminals, a source, and a drain, which are separated by a thin conducting layer of semiconductor material. This material is usually silicon, gallium arsenide, or indium phosphide. The terminals of a MOSFET are connected to a circuit board, allowing current to flow between the source and drain. A gate surrounds the source and drain, and when a voltage is applied to the gate, it creates an electric field that affects the current flow between the source and drain.
The AFT20P140-4WNR3 is a high-performance radio-frequency MOSFET. It is designed to provide high gain, high linearity, and low noise, making it well-suited for higher-performance radio applications such as those used in modern radio-frequency systems. The device’s dielectrically isolated top gate and low gate charge enable it to maintain low distortion and high power efficiency even in wideband amplitude modulation applications.
The device’s high breakdown voltage, low input capacitance, and low-frequency noise performance, combined with its low gate charge, makes it an ideal choice for higher-power, higher-frequency applications, including a wide variety of radio systems. The AFT20P140-4WNR3 is a rugged and reliable device, able to operate in extreme temperatures and maintain consistent performance over a wide temperature range.
RF MOSFETs, such as the AFT20P140-4WNR3, are ideal for use in radios and other wireless transmission systems. The device’s dielectrically isolated top gate provides excellent isolation and low distortion, making it ideal for use in wideband systems. The device’s high gain, linearity, and low noise make it suitable for use in a variety of applications, including Bluetooth and Wi-Fi. The device is also robust and able to handle extreme conditions, making it well-suited for use in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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