AFT23S160W02GSR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	LDMOS
Frequency:	2.4GHz
Gain:	17.9dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.1A
Power - Output:	45W
Voltage - Rated:	65V
Package / Case:	NI-780GS-2L
Supplier Device Package:	NI-780GS-2L

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AFT23S160W02GSR3 Application Field and Working PrincipleThe AFT23S160W02GSR3 (AFT-23S160w02GSR3) is a surface-mounted Radio Frequency (RF) MOSFET transistor. It is designed for application in radio frequency (RF) power amplifiers, as well as other, similar RF devices. This device has a maximum junction temperature capability of 175°C, with a maximum operating frequency of 3000 MHz.This device is a MOSFET transistor and is composed of a source, channel, and drain. The source is connected to the gate and the drain is connected to the gate. When the gate voltage is greater than the value of the threshold voltage, the channel conducts current and the device is said to be in its “on” state. Additionally, when the gate voltage is lower than the threshold voltage, the device is said to be in its “off” state.The AFT23S160W02GSR3 has a maximum drain current of 5.25 A, a maximum drain-source voltage of 30V, and a maximum gain of 11 dB at 2.8 GHz. It has a low total gate charge which is a one of the main advantages and makes it suitable for use in RF circuits. Furthermore, it features fast switching speed and high current handling capacity, enabling it to operate at high frequencies.The AFT23S160W02GSR3 is best suited for use in RF devices such as RF power amplifiers and RF switches, as well as other applications. In particular, it is used in mobile communication devices as a power amplifier due to its excellent gain and low noise. Additionally, it can be used in wideband amplifiers, power antennas, and low-noise amplifiers (LNAs).In conclusion, the AFT23S160W02GSR3 is a MOSFET transistor designed for high-frequency applications. It features low gate charge, fast switching speed, and high current handling capacity. This allows it to be used in various RF applications, such as power amplifiers, switches and LNAs.

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