Introduction
The AFT21H350W04GSR6 is a Power MOSFET series specifically designed for RF applications. It has a low RDS(on) so it reduces power consumption and overall thermal losses. This MOSFET series has excellent switching performance due to its low turn-on and turn-off times. In addition, it provides a much higher breakdown voltage than traditional MOSFETs.
Application Field
The AFT21H350W04GSR6 series is widely used in RF power amplifiers, RF switches, RF mixers, RF power dividers, RF couplers, and various other RF applications. It is also suitable for mobile radio, PCS and DBS applications. Moreover, this MOSFET series is used in audio amplifiers and power supplies for high-end audio systems.
Working Principle
The AFT21H350W04GSR6 works on metal oxide semiconductor (MOS) technology. A MOSFET is essentially a metal oxide semiconductor field effect transistor (MOSFET). It consists of a metal oxide layer that is formed between the gate and the channel of the transistor. The current flows through the channel when a voltage is applied between the gate and the source. When the voltage is increased, the current flow increases, resulting in an increase in the power output.The MOS transistor is further divided into two categories, n-channel and p-channel. The n-channel MOSFETs have a negative voltage applied to the gate, which in turn causes a current to flow from the source to the drain. The p-channel MOSFETs have a positive voltage applied to the gate, resulting in current flow from the drain to the source.The AFT21H350W04GSR6 series uses a new MOSFET technology in which the MOSFET is formed on a silicon substrate. This allows for higher gate drive current and breakdown voltage. In addition, this technology enables a low on-resistance, which reduces power losses.Finally, the AFT21H350W04GSR6 series has an integrated gate protection diode, which protects the device from electrostatic discharge (ESD). This diode prevents the device from being destroyed in the event of an ESD event.
Conclusion
The AFT21H350W04GSR6 series is a high-performance Power MOSFET series specifically designed for RF applications. Its low on-resistance reduces power losses and its higher breakdown voltage makes it suitable for high-power RF applications. Its integrated gate protection diode protects the device from ESD and makes it more reliable. The AFT21H350W04GSR6 series is used in a wide variety of RF applications and audio applications.