Allicdata Part #: | AFT21S240-12SR3-ND |
Manufacturer Part#: |
AFT21S240-12SR3 |
Price: | $ 70.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI780S-2 |
More Detail: | RF Mosfet LDMOS 28V 1.4A 2.17GHz 20.4dB 55W NI-880... |
DataSheet: | AFT21S240-12SR3 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 63.68230 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 20.4dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 55W |
Voltage - Rated: | 65V |
Package / Case: | NI-880XS-2L-2L |
Supplier Device Package: | NI-880XS-2L-2L |
Description
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AFT21S240-12SR3 application field and working principle
AFT21S240-12SR3 is a high performance silicon N-Channel Radio Frequency (RF) Field Effect Transistor (FET). It is one of the last advancements in the power MOSFETs (MOSFET) technology. Its intended application is on high-power amplifiers, switching and switching operations in commercial and consumer systems, such as microwave and millimeter-wave systems.The FET is composed of two layers, the gate and the drain. The gate acts as a switch that can be closed and opened to provide an electrical current. It is the main component of a FET device, and it is responsible for the switching and controlling of current. The drain is an electrode that is connected to the gate. The drain provides the path for current to flow and provides a voltage to the gate.The AFT21S240-12SR3 is a particularly resistant MOSFET that can be used in high-frequency systems. It is designed to have an extremely low-drain-to-source capacitance. This is important for these types of applications because it ensures that the transistor does not cause any interference due to its parasitic capacitance. Furthermore, the AFT21S240-12SR3 has excellent DC and RF characteristics. The breakdown voltage is high and the on-resistance is low. The marketing frequency range is high, up to 4 GHz. The input capacitance is also low, which is important because it reduces the transistor size, making it suitable for small form factor designs.The AFT21S240-12SR3 can be used in a wide range of applications, including switching operations in consumer systems, microwave equipment, and automotive electronics. It is also suitable for use in high-power amplifiers, such as those used in telecommunications. Furthermore, it can be used in amplifier circuits such as those used in radio and television broadcast systems.The working principle of the AFT21S240-12SR3 is based on the application of a voltage to the gate of the device. When the voltage is applied, it changes the electric field across the channel of the device which in turn, affects the electron flow in the channel. When the voltage is increased, the current flowing through the channel also increases. In other words, the voltage controls the amount of current flowing through the channel of the device.The AFT21S240-12SR3 is an excellent choice for applications that require high performance and low switching losses. Its advanced features such as low drain-to-source capacitance, low input capacitance, and high gain make it highly suitable for high-frequency applications. It is also an ideal choice for amplifier and switching operations in commercial and consumer systems.The specific data is subject to PDF, and the above content is for reference
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