AFT23H200-4S2LR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AFT23H200-4S2LR6 is a silicon N-channel depletion mode gallium arsenide Field Effect Transistor (FET). This type of FET is a three terminal device which uses the principle of FET to control the operation of the device by changing the voltage applied to the gate terminal. It is used in RF applications such as amplifiers, frequency multipliers, and switching applications.

The three terminals of the device are the gate, drain, and source. The gate terminal is used to control the operation of the device when an appropriate voltage is applied. The source and drain terminals are connected to an external power source with the drain terminal being the sensing terminal where voltage changes can be measured. By altering the voltage applied to the gate terminal, the resistance of the conducting channel between the source and drain can be changed. This allows current to be regulated in circuits where it is necessary.

The AFT23H200-4S2LR6 is an N-Channel FET, which means the conducting channel between the source and the drain is of negative charge. The device is depletion mode, which means the voltage applied to the gate terminal will decrease the resistance of the conducting channel. In contrast to enhancement mode FETs, depletion mode FETs are always on and require an opposite voltage to be applied to the gate terminal in order to turn them off.

This type of FET is commonly used in RF application due to its low noise performance. It can be used in amplifiers and frequency multipliers by applying a suitable voltage to the gate terminal to control the current flowing through the drain. It is also very fast switching and can be used in high frequency applications such as switches. In addition, the device has high output impedance and high reverse breakdown voltage rating making it ideal for use in power amplifiers.

The AFT23H200-4S2LR6 is a reliable device and is commonly used in communication and other commercial applications such as TV/video tuning, microwave point-to-point links, UHF/VHF transceivers and other industrial applications. The device is easy to use and has a wide range of applications making it a popular choice for RF engineers. With its low noise performance, high output impedance and high reverse breakdown voltage, the AFT23H200-4S2LR6 makes an ideal choice for use in RF applications.

The specific data is subject to PDF, and the above content is for reference