AFT21S232SR3

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The AFT21S232SR3 is a type of metal oxide semiconductor field-effect transistor (MOSFET), typically used as a radio frequency (RF) power amplifier. Compared to more common bipolar transistors, MOSFETs are more efficient, require less input power, and are less affected by temperature variations. As a result, they are often used in RF transmitter and receiver applications, as well as audio amplifiers, modulators, and mixers.

The AFT21S232SR3 has a maximum drain-source voltage (VDS) of 21 volts and a maximum drain current (ID) of 230mA at a drain to source temperature (TDS) of 25 degrees Celsius. Its gate-source voltage breakdown voltage rating is -3 volts and drain to source breakdown voltage rating is 24 volts. Its maximum total power dissipation is 1.65 watts at a TDS of 25 degrees Celsius and it has a high-frequency cutoff of 3GHz. As a RF MOSFET, this device offers excellent linearity and low noise figure.

The working principle of the MOSFET is essentially that of a voltage-controlled switch. When a voltage is applied to the gate terminal, it induces an electric field on the gate which in turn creates an inversion layer on the drain side of the device. This inversion layer provides a conductive channel for the current flow from the source to the drain. As the gate voltage is increased the current passing through the drain also increases.

Because the MOSFET is essentially a switch, it has some unique characteristics when used as an amplifier. The : gate-to-source capacitance can be increased to boost the current flow, and the drain-to-source capacitance can be swept with a bias current to improve the linearity of the amplifier. The AFT21S232SR3 has an especially high power gain efficiency, making it well-suited for high-power applications.

In conclusion, the AFT21S232SR3 is a metal oxide semiconductor field-effect transistor designed for radio frequency power amplifiers. Its features and characteristics make it suitable for RF wireless communication, audio amplifier, modulation and mixer applications. Its gate-source voltage breakdown voltage rating of -3 volts and drain to source breakdown voltage rating of 24 volts makes it an attractive choice for high efficiency power amplifiers.

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