AFT26HW050SR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS (Dual)
Frequency:	2.69GHz
Gain:	14.2dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	9W
Voltage - Rated:	65V
Package / Case:	NI-780-4S4
Supplier Device Package:	NI-780-4S4

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AFT26HW050SR3 is a type of field effect transistor (FET) that is typically used for radio frequency (RF) applications. It belongs to the high-power, low-noise field effect transistors (FETs) family which amplifies signals in antenna receivers, transmitters, cable networks and other RF systems. The AFT26HW050SR3 has an average current gain of more than 75% over the frequency range of 300MHz to 1000MHz and a breakdown voltage of 26V. It can handle a maximum drain-source voltage of 25V and a maximum current drain of 20A.A FET is a unipolar transistor which uses an electric field to control the current flow in the drain-source channel. In contrast to a bipolar junction transistor (BJT), which operates with current conduction in both directions between the source and the drain, a FET is normally formed out of one conducting channel whose output (current) is controlled by a metal-oxide-semiconductor structure.The metal-oxide-semiconductor structure of a FET is made of a gate, a semiconductor substrate and a thin film of insulator (known as the gate dielectric). The gate of the FET is connected to the gate dielectric, and the current flowing through it is controlled by a variation in the voltage applied to the gate. When the applied voltage to the gate is equal to the threshold voltage of the FET, then the FET is completely open and current can flow freely. By increasing the gate-source voltage, the current flow is decreased until the FET is virtually closed, with very little or no current flowing.When the AFT26HW050SR3 is used for RF applications, the input is typically applied to the gate. This voltage is then used to control the drain-source current flow. The AFT26HW050SR3 is also capable of amplifying signals in the range of 10MHz to 1000MHz and even higher frequencies, making it well suited for high frequency applications.The AFT26HW050SR3 is a versatile and reliable device, and can be used in a variety of RF applications. For example, it can be used as a mixer to combine two RF signals, as an attenuator to reduce signal strength of the signal, or as an amplifier to increase the signal strength of the signal. In addition, the AFT26HW050SR3 can be used in radio transmitters, receivers, and other radio communications systems.In summary, the AFT26HW050SR3 is a field effect transistor (FET) specifically designed for use in radio frequency (RF) applications. It has a breakdown voltage of 26V and can handle a maximum drain-source voltage of 25V and a maximum current drain of 20A. The AFT26HW050SR3 is well-suited for high-frequency applications, such as mixers, attenuators, amplifiers and other radio communications systems. It is a versatile and reliable device and can provide excellent signal amplification for various RF systems.

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