AO4404BL_101

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AO4404BL--101 is a MOSFET, short for metal oxide semiconductor field-effect transistors, used in semiconductor power amplifiers, low voltage switches, and low-noise amplifiers. This type of MOSFET is single and was designed to work as either a single N-channel or P-channel device, depending upon the polarity of the voltage applied on its Gate (G) terminal.

MOSFETs are used in switching and amplifier applications due to their high impedance and low on-state resistance. This makes them well-suited to control the flow of voltage in a circuit. The AO4404BL--101 is particularly used in applications that require high dynamic response such as power amplifiers and low-noise amplifiers. The low on-resistance of this device also makes it perfect for digital applications such as power switching.

The AO4404BL--101 has a drain-to-gate breakdown voltage of 4.4 volts, a drain-to-source voltage of 28 volts, and a drain current of 4 amps at 25 degrees Celsius. It is also capable of withstanding peak pulses of 8 amps. The device has a Gate input capacitance of 8 picofarads. Its Gate-Source threshold voltage is 2 volts, and it has a static power dissipation of 2.3 Watts.

The AO4404BL--101 MOSFET has a typical operating temperature range of -55 to +125°C. In addition, the device has been designed with ruggedness in mind and it is capable of withstanding mechanical vibrations of up to 50 Gs. The device has a peak lead temperature of 250°C.

The AO4404BL--101 MOSFET works by using an electric field to control the flow of electrons. The Gate terminal serves as a control electrode, where a voltage is applied to allow electrons to flow from the source terminal to the drain terminal. The Gate terminal also acts as a barrier between the source and drain, allowing current to flow only when the Gate voltage is high enough.

MOSFETs are also characterized by their on-resistance (R_DS) which is the resistance between the drain and source when the Gate voltage is applied. The AO4404BL--101 MOSFET has an R_DS of 0.0083 Ohms. This low on-resistance makes this device ideal for use in power switching applications, as it reduces the amount of voltage and power that is dissipated in the circuit.

In summary, the AO4404BL--101 is a MOSFET that is used in high-dynamic response applications such as power amplifiers and low-noise amplifiers. It has a high Gate input capacitance of 8 picofarads, a low on-resistance, and an operating temperature range of -55 to +125°C. The device is capable of withstanding peak lead temperatures of 250°C and 50 Gs of mechanical vibration. Its low on-resistance makes it ideal for power switching applications, as it reduces the amount of voltage and power that is dissipated when the Gate voltage is applied.

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