AO4482L_101 Allicdata Electronics
Allicdata Part #:

AO4482L_101-ND

Manufacturer Part#:

AO4482L_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 100V 8SOIC
More Detail: N-Channel 100V 6A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4482L_101 datasheetAO4482L_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Vgs (Max): ±20V
Series: --
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Description

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The AO4482L_101 is one of the most versatile field-effect transistors (FETs) available on the market and can be used in a wide range of applications. This device is a single N-channel enhancement-mode MOSFET suitable for use in low-side switches, converters, DC/DC regulators, and analog switching circuits. It offers excellent power efficiency, low on-state resistance, and high-speed switching capabilities.

The AO4482L_101 is mainly used in AC/DC and DC/DC converters, voltage regulators, and other power-supply-related applications. In these applications, it performs as a high side switch to control the current flow. Its low on-state resistance and high efficiency make it ideal for high-power applications, such as driving power MOSFETs, LEDs, and motors. It is suitable for use in a wide range of applications, from low-power devices up to power supplies with a power rating of up to several hundred watts.

The AO4482L_101 is also a popular choice for analog switching applications. Its high on-state resistance ensures low power losses and allows high speed operation. Its low output-capacitance reduces propagation delays, making it ideal for high-frequency switching circuits. Its high input threshold voltage reduces current leakage and eliminates the need for a gate resistor.

The AO4482L_101 is an enhancement-mode MOSFET, which means that the gate voltage must be higher than the source voltage in order for current to flow through the device. When the gate-source voltage (Vgs) is lower than the threshold voltage (Vth), the device is said to be “OFF”. This means that the device blocks any current from flowing through it. When the Vgs is higher than Vth, the device is said to be “ON” and the current starts to flow through it. The on-state resistance (RDSon) of the device is measured when the device is in the “ON” state and is usually expressed in ohms per square.

The AO4482L_101 can be used in a variety of applications, from low-power digital applications to high-power analog and power-supply applications. Its combination of low on-state resistance, low input threshold voltage, and fast switching makes it suitable for a wide range of applications. With its excellent performance, reliability, and versatility, the AO4482L_101 is a great choice for any application requiring a single N-channel enhancement mode MOSFET.

The specific data is subject to PDF, and the above content is for reference

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