AO4476AL_101

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AO4476AL_101 is an enhancement mode power metal-oxide-semiconductor field effect transistor (MOSFET) designed for the switch mode power supply (SMPS) applications with an integrated simple drive circuit for low power consumption and low voltage operating range. AO4476AL_101 is a single MOSFET device that utilizes a silicon-controlled rectifier (SCR) at its drain terminal to regulate and control current flow. AO4476AL_101 is capable of providing high-efficiency switching circuit with its small package size and low on-resistance.

AO4476AL_101 has a cut-off voltage of 0.8 V to 1.0 V and a drain-to-source voltage of 15 V to 20 V. It has a maximum power dissipation of 40 W at its drain terminal, with a maximum drain-to-source current of 3.0 A. The on-state resistance of AO4476AL_101 is typically 0.1 Ω, and its gate-to-source capacitance is typically 5 pF. The operating temperature range of AO4476AL_101 is between -55℃ to 150℃.

AO4476AL_101 has various applications, mostly in power supplies, audio amplifiers, motor control, DC-DC conversion, current regulation, and in other power control devices. The device can be used as a switch in a bridge rectifier circuit or as an active switch to control the conduction angle in a ZVS circuit. It is suitable for applications that require high current, low on-resistance, and low voltage operation, such as solar cell applications.

The working principle of AO4476AL_101 is based on the MOSFET gate to source voltage (Vgs) turn-on voltage threshold. When the gate voltage reaches the Vgs turn-on threshold, the gate-to-source capacitance will oppose switching and reduce power dissipation. To regulate and control the current flow in AO4476AL_101, the integrated SCR is used at its drain terminal. During the turn-on period, the source voltage must be lower than the gate voltage to ensure the MOSFET is on and the SCR is conducting. Once the voltage reaches the turn-on threshold, the MOSFET is turned on and current begins to flow.

When the MOSFET is turned off, the SCR will provide a bypass path to dissipate the energy stored in the gate-to-source capacitance, which will then be used to turn on the MOSFET. The SCR is also used to regulate and control the current flow in AO4476AL_101. It can be used to limit the maximum current that can flow across the MOSFET’s drain-to-source terminal.

In conclusion, AO4476AL_101 is an enhancement mode power MOSFET designed for switch mode power supply applications. It is suitable for applications that require high current, low on-resistance, and low voltage operation. AO4476AL_101 has an integrated SCR that allows for current regulation and control. The MOSFET is turned on and off by adjusting its gate-to-source voltage (Vgs) threshold. When the current reaches its maximum limit, the SCR is used to provide a bypass path to dissipate the energy stored in the gate-to-source capacitance and turn off the MOSFET.

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