
Allicdata Part #: | AO4496_101-ND |
Manufacturer Part#: |
AO4496_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 10A 8SOIC |
More Detail: | N-Channel 30V 10A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 715pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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AO4496_101 is an advanced N-channel PowerTrench MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is designed for low voltage, high current, high efficiency power management applications such as DC/DC converters, power supplies and port power distribution. This device can also be used in several industrial and automotive applications.
The AO4496_101 offers very low on-resistance in a SOT-23 (Small Outline Transistor) package. It has a breakdown voltage rating of 100V, making it suitable for applications requiring high voltage protection. The device has a low gate input capacitance of 21pF and very low intrinsic capacitance, giving it a good switching performance. Its maximum allowable substrate current is 40mA and maximum total gate charge is 8nC.
The AO4496_101 application field and working principle are based on MOSFETs. A MOSFET is a 4-terminal device consisting of two p-type and two n-type regions. A positive voltage VGS, applied to the gate terminal, inverts the channel, causing a current to flow between the source and the drain. This enables the device to act as a switch or amplifier. In addition, the application field and working principle of the AO4496_101 are based on a built-in protection circuit which limits the maximum inversion voltage and current.
The AO4496_101 is designed to be used as an alternative to traditional MOSFETs in high power applications. It features a low RDS(ON) – 85mΩ typical at 4.5V and 140mΩ typical at 2.5V – which reduces the power losses associated with the device and increases its efficiency. The device also offers fast switching times compared to other MOSFETs. Its maximum drain-source on-resistance is maintained during both the forward and reverse conduction modes, enabling it to be used in high-side and low-side switch designs with no additional components. This also reduces the complexity of power supply design.
The AO4496_101 operates at temperatures as low as -55°C and as high as 175°C, making it suitable for extreme conditions such as in automotive applications. In addition, it comes in an industry-standard, space-saving 3-pin SOT-23 package, which provides easier routing and more efficient use of board space in final applications. These features make it suitable for a wide range of power management applications.
In summary, the AO4496_101 is an advanced N-channel PowerTrench MOSFET designed for low voltage, high current and high efficiency power management applications such as DC/DC converters and power supplies. It offers a very low on-resistance, high breakdown voltage, fast switching times and operates at temperatures as low as -55°C and as high as 175°C. It is available in a small and cost-effective SOT-23 package and comes with built-in protection circuits to ensure a longer life of the device. Therefore, the AO4496_101 is an excellent choice for a wide range of power management applications.
The specific data is subject to PDF, and the above content is for reference
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