AO4496_101 Allicdata Electronics
Allicdata Part #:

AO4496_101-ND

Manufacturer Part#:

AO4496_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 10A 8SOIC
More Detail: N-Channel 30V 10A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4496_101 datasheetAO4496_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AO4496_101 is an advanced N-channel PowerTrench MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is designed for low voltage, high current, high efficiency power management applications such as DC/DC converters, power supplies and port power distribution. This device can also be used in several industrial and automotive applications.

The AO4496_101 offers very low on-resistance in a SOT-23 (Small Outline Transistor) package. It has a breakdown voltage rating of 100V, making it suitable for applications requiring high voltage protection. The device has a low gate input capacitance of 21pF and very low intrinsic capacitance, giving it a good switching performance. Its maximum allowable substrate current is 40mA and maximum total gate charge is 8nC.

The AO4496_101 application field and working principle are based on MOSFETs. A MOSFET is a 4-terminal device consisting of two p-type and two n-type regions. A positive voltage VGS, applied to the gate terminal, inverts the channel, causing a current to flow between the source and the drain. This enables the device to act as a switch or amplifier. In addition, the application field and working principle of the AO4496_101 are based on a built-in protection circuit which limits the maximum inversion voltage and current.

The AO4496_101 is designed to be used as an alternative to traditional MOSFETs in high power applications. It features a low RDS(ON) – 85mΩ typical at 4.5V and 140mΩ typical at 2.5V – which reduces the power losses associated with the device and increases its efficiency. The device also offers fast switching times compared to other MOSFETs. Its maximum drain-source on-resistance is maintained during both the forward and reverse conduction modes, enabling it to be used in high-side and low-side switch designs with no additional components. This also reduces the complexity of power supply design.

The AO4496_101 operates at temperatures as low as -55°C and as high as 175°C, making it suitable for extreme conditions such as in automotive applications. In addition, it comes in an industry-standard, space-saving 3-pin SOT-23 package, which provides easier routing and more efficient use of board space in final applications. These features make it suitable for a wide range of power management applications.

In summary, the AO4496_101 is an advanced N-channel PowerTrench MOSFET designed for low voltage, high current and high efficiency power management applications such as DC/DC converters and power supplies. It offers a very low on-resistance, high breakdown voltage, fast switching times and operates at temperatures as low as -55°C and as high as 175°C. It is available in a small and cost-effective SOT-23 package and comes with built-in protection circuits to ensure a longer life of the device. Therefore, the AO4496_101 is an excellent choice for a wide range of power management applications.

The specific data is subject to PDF, and the above content is for reference

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