AO4447A Allicdata Electronics
Allicdata Part #:

785-1198-2-ND

Manufacturer Part#:

AO4447A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 17A 8-SOIC
More Detail: P-Channel 30V 17A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4447A datasheetAO4447A Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AO4447A is a P-channel enhancement mode MOSFET manufactured by the well-known Alpha and Omega Semiconductor (AOS). It makes an ideal switch in applications where bipolar junction transistors (BJT) can be inefficient. As an enhancement-mode MOSFET, it only starts to conduct if voltage is applied to the gate. When the applied voltage is higher than the threshold voltage, the current starts to flow through it, creating a switch.

The AO4447A can be used in a variety of applications, such as power switching for battery-powered circuit designs, general purpose analog switch and digital applications, performance-critical applications such as switching of audio signals and supply current management of battery charging. Its low on-resistance and high off-state drain-source voltage make it an ideal choice for high voltage applications.

This MOSFET also has a high current capability, low threshold voltage and low gate charge, making it highly suitable for switching high current load. It can even handle up to 25A of continuous load current, making it ideal for high power applications. Furthermore, it has a low on-resistance of 23mohm, making it an ideal choice for low voltage applications. Apart from this, it also has a high breakdown voltage of 55V, making it a great choice for applications with high voltage requirements.

The AO4447A has a gate-source voltage range of -4V to +4V and a maximum gate-drain voltage range of ±12V. It offers a fast switching speed and a low gate-source capacitance to reduce switching power loss. This fast switching speed makes it ideal for high speed data-transfer applications as well. Furthermore, its high temperature operability makes it suitable for high-temperature applications, such as automotive applications.

The working principle of AO4447A is quite simple. When a voltage of a certain level is applied to its gate, it acts as a switch, connecting the drain and the source together, thus allowing current to flow between them. This voltage is called the “threshold voltage”. When the applied voltage is lower than the threshold voltage, the MOSFET acts as an open switch, not allowing any current to flow between the source and the drain.

In summary, the AO4447A MOSFET is a great choice for a variety of applications. Its low threshold voltage, high current capability, low on-resistance and fast switching speed make it ideal for switching high current loads, low voltage applications, high voltage applications and high-speed data-transfer applications. Moreover, its high temperature operability makes it suitable for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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