AO4485L

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The AO4485L is a logic-level N-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). The FET is designed to be used in circuits where low RDS(on) is required at logical levels. The AO4485L is built with a small-footprint package and has a high maximum drain current. It provides an improved version of the popular D-SUBminiature FET package, and is suitable for a wide range of circuit applications.

The AO4485L is applicable in applications such as general purpose switching, amplifier, low-frequency driver, load switch, and load pull-up device. It is also suitable for the use of home audio, commercial audio, guitar amplifiers, and other high-performance audio applications. Due to its high performance, the AO4485L is also used in motor control, battery management and power systems, as well as in telecom and networking application.

The AO4485L is comprised of a three-terminal system, which supplies two sources of electric power, a gate or control input, and the Drain. The FET is made up of an N-Channel MOSFET with its Gate connected to the Source and Drain. The power sources supplied to the gate and drain of the MOSFET ensures that the gate voltage applied to the FET remains at a logical level. The MOSFET has an intrinsic capability to isolate the switch from the applied voltage when the gate voltage is below a certain threshold. This is known as its threshold voltage. When the gate voltage is above the threshold voltage, the MOSFET will be in the on-state and there will be a conducting channel between the Source and the Drain.

The working principle of the AO4485L commences with the application of a voltage to the gate of the MOSFET. When the voltage applied to the gate is equal or higher than the threshold voltage of the MOSFET, then the FET will be in the on-state and current will flow from the source to the drain. On the other hand, when the voltage on the gate is less than the threshold voltage, then the FET will be in the off-state and the current flow will stop. This makes the FET an effective device for controlling the power flow in circuits and switching between high and low conditions in a circuit.

The AO4485L has a maximum Drain current of 60A and a RDS(on) of 0.045 ohm. With its high maximum drain current and low RDS(on) , the FET is suitable for high-power switching applications. It is designed with the capability to handle high current and provide fast switching speeds. The low on-resistance of the AO4485L also helps reduce switching losses and power dissipation. Furthermore, the small package size of the FET allows it to be easily placed in a circuit design, helping save space and cost.

The AO4485L is an ideal choice for applications requiring low RDS(on) and fast switching speeds. Its high Maximum drain current, low RDS(on), and small footprint make it suitable for a wide range of circuit applications such as switch mode power supplies, audio amplifiers, and load switching. Furthermore, the FET is capable of operating at a logical level, which makes it well-suited for digital applications.

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