
Allicdata Part #: | AO4476A_103-ND |
Manufacturer Part#: |
AO4476A_103 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 15A 8-SOIC |
More Detail: | N-Channel 30V 15A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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AO4476A_103 is a single N-channel enhancement mode MOSFET with a low on-state resistance. With the integrated Schottky diode, AO4476A_103 is ideal for load switch and DC-DC converter applications. It has a low gate-source leakage current and low gate-threshold voltage and hence offers good switching performance. As a result, the AO4476A_103 can be used in a variety of switching applications such as low power control and motor control, light dimming and pulse modulator circuits.
The AO4476A_103 belongs to a family of MOSFETs that are commonly referred to as Field Effect Transistors (FETs). These devices are constructed in such a way that the controlling element for the device is the electric field. This means that the device is basically a three-terminal component with two important modes of conduction: enhancement mode and depletion mode.
The AO4476A_103 operates in enhancement mode and is considered to be the most common type of FET. In this type of FET, the on-state resistance or Rds is determined by the gate-source voltage, or the voltage supplied at the gate. The higher the voltage supplied at the gate, the higher the on-state resistance. This type of FET also has an internal Schottky diode, which helps to protect the device against accidental overvoltage.
The working principle of the AO4476A_103 is relatively straightforward. When a voltage is applied to the gate, an electric field is created which, in turn, creates a conductive channel between the drain and source. The bigger the voltage applied at the gate, the bigger the channel and the lower the resistance. This means that when the voltage supplied at the gate is increased, the on-state resistance of the transistor is decreased and when the voltage is decreased, the on-state resistance is increased.
The AO4476A_103 is an ideal and reliable choice for applications that require low on-state resistance, good switching performance, and low gate-source leakage current. It can be used in a variety of circuit configuration such as low power control and motor control, light dimming, and pulse modulator circuits. The AO4476A_103 also provides protection against accidental overvoltage, making it a safe and effective choice in many applications.
The specific data is subject to PDF, and the above content is for reference
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