AO4413L Allicdata Electronics
Allicdata Part #:

AO4413L-ND

Manufacturer Part#:

AO4413L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 15A 8SOIC
More Detail: P-Channel 30V 15A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4413L datasheetAO4413L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AO4413L is a kind of single N-channel enhancement-mode field-effect transistor (FET) with good temperature stability and drain current. Its applications mainly include load switches, general purpose amplifiers, audio amplifiers, and energy management. Its working principle is based on the behavior of a metallic or semiconductor channel between drain and source. Positive voltages can be applied to the gate to turn the device on and increase current flow across the channel.

When a voltage is applied to the gate of AO4413L, a channel of electrons forms between its source and drain regions. This process is known as inversion and occurs when the electric field generated at the gate attracts electrons from the substrate and forms a conductive channel. Additionally, the electric field between the gate and the substrate controls the number of electrons in the channel, creating a conductive path between the drain and source and allowing current to flow from source to drain. The resistance of this channel and the current that flows through it depends on the differences in electric field strengths.

In addition to its basic working principle, AO4413L has other useful properties. For example, the voltage applied to the gate controls the current that flows between the source and drain and determines if the device is on or off. This is known as the threshold voltage and is typically higher than that required to create the inversion layer. At a given voltage, the device will have a maximum current flow of which the amount can be controlled by changing the amplitude of the gate voltage. This feature also has the advantage of allowing the device to draw low levels of standby current when it is in the off state.

AO4413L’s temperature stability and high drain current can be useful for various types of applications. It is ideal for use in load switches for power saving devices since it can help regulate the amount of current passing through the switch. It is also suitable for general purpose amplifiers, audio amplifiers and energy management due to its ability to regulate current flow across frequencies. Furthermore, its robust construction and high switching speed makes it suitable for high voltage switching applications.

In conclusion, AO4413L can offer a variety of features that make it a suitable choice for many different applications. Its working principle is based on the behavior of the channel between the drain and source and allows the device to be used as an effective load switch, general purpose amplifier, and audio amplifier. Its temperature stability and high drain current make it suitable for many energy management applications and its robust construction and high switching speed make it ideal for high voltage switching applications.

The specific data is subject to PDF, and the above content is for reference

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