AO4409

Vgs(th) (Max) @ Id:	2.7V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6400pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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AO4409 Application Field and Working Principle

AO4409 is a single-channel enhancement-type field effect transistor (FET) with low on-state resistance and high switching speed. It is widely used in power supplies, small power amplifiers, switches, and other low-voltage, low-current applications. This paper will discuss the application field and working principle of AO4409.

Application Field

AO4409 is widely used in many circuits of low-voltage, low-current applications. It can be used as a power switch, such as step-down power supplies and in small power amplifiers. In step-down power supplies, it is used to control the output current and to provide over-current protection. In small power amplifiers, it is used for switching and controlling the current, voltage and power.AO4409 is also used in light load switch circuits. It can be used to control the current and voltage for LED lighting and other low-power applications. It can also be used in various application fields, such as industrial and consumer applications, motor control, and so on.In addition, AO4409 is also suitable for switching and controlling the voltage and current in charge pump circuits. It is also used in ultrasonic circuit, radio frequency amplifier circuits and other radio frequency applications.

Working Principle

AO4409 is an enhancement-type field effect transistor. It uses a metal-oxide-semiconductor (MOS) structure to operate. When a positive gate voltage is supplied, it conducts current by opening the semiconductor channel and allowing current flow between the source and drain terminals. When the positive gate voltage is removed, the semiconductor channel closes, and the transistor stops conducting.The gate terminal of AO4409 is insulated from the source and the drain terminals, allowing for high gate impedance and low gate current. This leads to fast switching and low power dissipation. The MOS structure also allows for low on-state resistance, low gate capacitance, and high switching speed.AO4409 is also well suited for driving capacitive loads. It has a low gate-source capacitance, which allows for fast switching speed and high frequencies. It also has a high current-handling-capacity, which is suitable for loads with large capacitance.In summary, the metal-oxide-semiconductor (MOS) structure of AO4409 allows for high switching speeds, low power dissipation, and low on-state resistance. Its high current-handling-capacity and low gate capacitance make it well suited for capacitive loads and high switching frequency applications. It is an ideal choice for a wide range of low-voltage and low-current applications.

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