
Allicdata Part #: | AO4435_102-ND |
Manufacturer Part#: |
AO4435_102 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 10.5A 8SOIC |
More Detail: | P-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 11A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 20V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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AO4435_102 is a single MOSFET designed for computer, consumer and communication electronics applications. This Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) works in low voltage and high voltage applications. AO4435_102 is rated for high performance levels with a drain to source breakdown voltage of 60 V. It has a drain current rating of 15A and operates with a maximum junction temperature of 150°C. The ON-resistance of AO4435_102 is 57.5 milliohms in the ON state.
AO4435_102 is suitable for use in many different types of applications. It is commonly used in power supplies, audio amplifiers, and DC-DC converters. The MOSFET can be used as a high-power switch, to control and regulate power in systems such as solar inverters and AC motor drives. It is often used as a high-side switch for motor control applications. The AO4435_102 can also be used in switching power supplies, to regulate the current in high power applications.
The working principle of AO4435_102 is based on the principle of operation for MOSFETs. A MOSFET is a voltage-controlled semiconductor device that is used for amplifying and switching electrical signals. It is composed of a source and drain terminal, a gate terminal and the substrate, which is the semiconductor material between the source and drain. The gate terminal is connected to the gate voltage, VG, and the source terminals are connected to the source voltage, VS. When the gate voltage, VG, is above a certain threshold voltage, VT, the MOSFET will be in the ON state, meaning it will conduct electric current.
The AO4435_102 has a low input capacitance of 1.5 pF, which reduces switching losses and allows for faster turn-off time. Its low capacitance also makes it suitable for switching at high frequencies. The MOSFET\'s low thermal resistance means that it can operate at high temperatures and lower power dissipation. The low gate threshold voltage of 1.6 V helps reduce power usage and makes it easier to switch at high speed.
The AO4435_102 is a cost-effective and reliable MOSFET for high performance applications. It has a wide range of operating voltage, low input capacitance, low power dissipation, and low gate threshold voltage. It is suitable for use in power converters, audio amplifiers, solar inverters, and motor control applications. The device is designed to provide reliable performance in high voltage and high temperature operating conditions.
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