AO4435L_102

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AO4435L_102 is a low-voltage and low-power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to operate over the -20°C to 85°C temperature range. It is typically used in applications where fast switching, low gate charge, and low on-state resistance is required. It is designed with N-Channel depletion mode.

The AO4435L_102 offers a maximum Drain Current of 30A and Gate Threshold Voltage of -2.0V. It is manufactured using 100% avalanche tested DMOS process, which ensures superior quality of devices for a wide range of applications. It also offers a high breakdown voltage of 175V and Low On-State Resistance of 0.64Ω.

The AO4435L_102 is ideal for use in both low-side and high-side switching applications. It is designed to control the flow of current in the drain-source path while drawing minimal current from the base or gate terminal. It can be used in DC-DC converters, automotive power supplies, hot-swap and power-over-Ethernet (PoE) applications. It can also be used as a voltage regulator for Server/Data Center power applications.

The working principle of AO4435L_102 is based on MOSFETs, which are unipolar transistors used for controlling electrical signals. A MOSFET consists of three layers: the source, gate, and drain. The Gate is the controlling element, which is connected to the base by a gate oxide layer. When a voltage is applied to the gate, the layer of gate oxide creates a strong electric field, which modulates the flow of electrons from the source to the drain. This in turn controls the amount of current flowing through the drain-source path, thereby switching on and off the device.

The AO4435L_102 is designed using a N-Channel MOSFET architecture and is optimized to provide low gate charge and low on-state resistance. The low on-state resistance helps reduce voltage drop, providing an efficient power conversion. The product is provided in an Industry Standard TO-220 package, making it easier to assemble and integrate in applications. Moreover, it has low switching loss, which helps reduce the heat generation in devices.

The AO4435L_102 MOSFET is ideal for applications requiring fast switching, low on-state resistance and low gate charge. Its high breakdown voltage and low-power design enable it for use in power over Ethernet (PoE) applications as well as low-side/high-side switching applications. The product is manufactured using 100% avalanche tested DMOS Process, which ensures superior quality of devices for a wide range of applications.

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