AO4435L_103 Allicdata Electronics
Allicdata Part #:

AO4435L_103-ND

Manufacturer Part#:

AO4435L_103

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 8SOIC
More Detail: P-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8...
DataSheet: AO4435L_103 datasheetAO4435L_103 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±25V
Series: --
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Description

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The AO4435L_103 is an N-channel, single MOSFET. It is designed to be used in a wide variety of applications including power management, switching, and voltage level translation. The MOSFET is available in the TO-225 package, which is well suited for surface mount applications. The AO4435L_103 offers excellent power handling and low on-resistance, making it the ideal choice for applications requiring high-current switching.

The AO4435L_103 is a voltage-controlled device, meaning that the gate voltage determines the drain-source current. When a voltage is applied to the gate of the MOSFET, it creates an electric field that attracts free electrons to the gate. This creates a channel between the source and drain contacts, allowing current to flow through the MOSFET. The amount of current that can flow is determined by the applied voltage. This allows the MOSFET to be used as an electronic switch, since the current can be controlled by changing the voltage applied to the gate.

The AO4435L_103 is well suited for power management applications. It can be used as a high-side switch for controlling the supply of power to devices, as well as a low-side switch for controlling the discharge of power from devices. With the low on-resistance, the AO4435L_103 can provide power to devices with minimal voltage drop across the switch, ensuring that devices are supplied with the voltage they require for optimal performance.

The AO4435L_103 is also well suited for voltage level translation applications. Since the voltage applied to the gate determines the drain-source current, it can be used to regulate the voltage level of a circuit. This is useful for translating a low-voltage signal to a higher voltage level, or a higher voltage signal to a lower voltage level. The MOSFET is also capable of switching the voltage levels at high speed, making it the ideal choice for high-speed level translation applications.

In summary, the AO4435L_103 is a highly versatile single MOSFET. It is designed to be used in a wide variety of applications including power management, switching, and voltage level translation. It features low on-resistance, making it ideal for high-current switching applications, as well as voltage level translation applications. The versatile MOSFET is available in the TO-225 package, making it suitable for surface mount applications.

The specific data is subject to PDF, and the above content is for reference

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