AO4437 Allicdata Electronics
Allicdata Part #:

785-1031-2-ND

Manufacturer Part#:

AO4437

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 12V 11A 8SOIC
More Detail: P-Channel 12V 11A (Ta) 3W (Ta) Surface Mount 8-SOI...
DataSheet: AO4437 datasheetAO4437 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AO4437 MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a kind of semiconductor device which is used in power electronic applications, especially as electronic switches. It is often used in motor control, robotics, audio amplifiers, lighting control, etc. AO4437 can be used in high current, high-power switching circuits, and it is suitable for applications that require low-voltage control.

The MOSFET is composed of a source, a drain, a substrate, and a gate. The drain and source electrodes are used to conduct electrical current across the device, while the gate is used to control the flow of current. When the gate voltage is high enough, a channel is formed between the source and the drain, allowing current to pass through the device. If the gate voltage is lowered, the channel is blocked from the drain, preventing current from passing through the device. In this way, the MOSFET can be used as an on/off switch.

The working principle of AO4437 is based on a simple phenomenon. When a gate voltage is applied, the electric field generated by the gate creates an electric field in the region between the source and the drain. This electric field has two effects on the drain-source channel. The first is that it attracts electrons to the channel. The second is that it also creates a \'barrier\' to the flow of electrons, making it harder for electrons to move in the same direction.

The gate can be used to control the current flowing through the device by varying the gate voltage. When the gate voltage is increased, the barrier to the flow of electrons is reduced and the MOSFET is turned on, allowing an electric current to flow through the device. Conversely, when the gate voltage is reduced, the barrier is raised and the current is blocked. This makes it possible for the AO4437 to be used in a wide variety of applications.

AO4437 is a normally-off type MOSFET (N-channel) and it can be used in a wide range of applications, from motor control to lighting control, and from signal amplification to power regulation. In addition, it is capable of operating at high frequencies, making it suitable for use in high-speed switching circuits.

In summary, AO4437 MOSFET is a power electronic device that combines the advantages of low-voltage control and high current, making it suitable for a wide range of applications. Its working principle is based on the manipulation of the electric field between the source and the drain, allowing it to be used as an efficient electronic switch.

The specific data is subject to PDF, and the above content is for reference

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