![AO4449 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 785-1199-2-ND |
Manufacturer Part#: |
AO4449 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 7A 8SOIC |
More Detail: | P-Channel 30V 7A (Ta) 3.1W (Ta) Surface Mount 8-SO... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AO4449 is a single N-channel, high-performance and low-voltage, PowerTrench MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It has low rDS(on) to minimize conduction loss and improve system efficiency. It also has good diode characteristics to reduce power losses in body diode, reverse recovery characteristics and safe operating area (SOA).
Application Fields
AO4449 has many applications. It can be used in high-efficiency DC-DC applications, server power supplies, telecom power management, computer power supplies, battery and other automotive system power management, networks and industrial applications. Moreover, AO4449 can also be used in power management, high/low-side switches applications and load switches for small- and medium-power designs which require small size, boards space and low voltage operation.
Working Principle
AO4449 consists of a source, a drain (or load connection) and a gate. When a potential is applied on the gate, the channel between the source and the drain is created. Thus the current flows from source to the drain. When the gate voltage is increased, the channel will be expanded and the current flow in the channel increases. Similarly, when the gate voltage is decreased, the channel will be narrowed and the current flow decreases.
The voltage which is applied to the drain controls the resistance between the source and the drain. This resistance affects the flow of current and when the resistance increases, it decreases the flow of current and vice versa. The gate voltage also affects the flow of current in the channel and the current flow is proportional to the gate voltage.
In order to get the desired performance from AO4449, it is very important that the current level in the channel should be maintained properly. This can be achieved by properly controlling the drain-to-source resistance and the gate voltage. This can be done by using various techniques such as proper selection of the device, proper biasing techniques, proper gate drive techniques, etc.
Overall, AO4449 provides excellent performance, high efficiency and low losses. It is widely used in various applications which require improved performance and low losses. This device is highly reliable and cost effective, thus making it the best choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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AO4406AL_103 | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 30V 8SOICN-Ch... |
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AO4435L_103 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 30V 8SOICP-Ch... |
AO4435L_104 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 30V 8SOICP-Ch... |
AO4441L | Alpha & ... | -- | 1000 | MOSFET P-CH 60V 8SOICP-Ch... |
AO4441L_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 60V 8SOICP-Ch... |
AO4443L | Alpha & ... | -- | 1000 | MOSFET P-CH 40V 8SOICP-Ch... |
AO4447AL | Alpha & ... | -- | 1000 | MOSFET P-CH 30V 8SOICP-Ch... |
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