
Allicdata Part #: | 785-1197-2-ND |
Manufacturer Part#: |
AO4444 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 80V 11A 8-SOIC |
More Detail: | N-Channel 80V 11A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2865pF @ 40V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | SDMOS™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AO4444 is a depletion-mode HEXFETPower MOSFET designed to deliver high power dissipation at high frequency applications. This MOSFET has an extended safe operating area making it suitable for use in applications that require higher power levels than can be attained with regular MOSFETs. This makes it ideal for use in high power occupancy lighting and power applications.This is a single FET and has three-terminal design that provides effective device protection and high-perfect impedance matching. It has an internal electro-static discharge (ESD) protection diode, which enables it to withstand high static-charge currents. This feature makes it suitable for use in both consumer and consumer applications.The AO4444 offers excellent frequency response and low input drive current. It has a low input capacitance and a low output impedance, which make it suitable for use in power supply switching and high speed signal transmission. It is also impervious to thermal and electrical shock. As a result, it is suitable for use in high-power industrial and commercial applications.The AO4444 uses composite bipolar transistor technology, which allows the device to conserve energy while delivering high power with fast switching capability. The device has an on-chip temperature sensing diode that is integrated into the device, which helps to maintain a high degree of reliability. The integrated power diodes also provide protection against electrical and thermal over-voltage that might otherwise damage the FET.
The device also provides high immunity to Electro susceptibility (EMS) and Electromagnetic interference (EMI). This is important for applications that require fast switching and require high levels of electrical noise immunity. The integrated power diodes also provide balanced power supply noise reduction. These features make the device suitable for use in applications such as motor control, solar cell, dark sensor, light sensor, and digital circuit applications.The AO4444 has an extremely low static power consumption, which makes it suitable for use in systems that are designed to conserve power. The device also has a wide operating temperature range and is designed to provide a long life. This makes it suitable for applications that require reliable long-term operation.The device is also very easy to use. It has an adjustable gate voltage and is available in several package types. This provides flexibility in the design of the circuit and allows the device to be used in a variety of applications.In summary, the AO4444 is a high-performance, reliable MOSFET. It is suitable for use in applications that require fast switching and high power levels. It is also very easy to use and is available in many package types. The device is suitable for use in a wide range of applications, including motor control, solar cell, dark sensor, and light sensor applications.
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