Allicdata Part #: | AO4447AL-ND |
Manufacturer Part#: |
AO4447AL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 8SOIC |
More Detail: | P-Channel 30V 17A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | AO4447AL Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 15V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
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AO4447AL is an advanced FET that features both high drain-source blocking voltage and low on-resistance. It is a N-type enhancement mode MOSFET featuring short circuit robustness and low gate charge. The cutoff frequency and power dissipation rise with increasing drain-source voltage. These features make this MOSFET best suited for numerous power management applications such as DC-DC converters, battery protection circuits, and load switches.
AO4447AL has a wide array of applications in the automotive and consumer electronics industries. It can be used to control power supply or switch power in various places. This component can also be used to protect important devices and systems by monitoring voltage, current, and temperature. Additionally, it can be used in a variety of audio and video projects, computers, and heaters.
AO4447AL is an N-type enhancement mode MOSFET. This type of MOSFET consists of a p-type substrate, gate and drain region and n-type source region. When the voltage applied at the gate is less than the threshold voltage, no channel will be formed between the drain and the source, and hence no current flows through the device. However, when the voltage applied to the gate is increased beyond the threshold voltage, a channel will be formed between the drain and the source, enabling current flow. The drain-source current will increase linearly with the gate voltage.
AO4447AL has good thermal performance and fast switching speed. This component is designed with a low on-resistance that ensures efficient power unloading and a high drain-source voltage withstanding capability ensuring a long operational life.It also has a relatively low gate charge, which helps to reduce the conduction loss while allowing it to work in a wide variety of applications.
AO4447AL is an excellent choice for many power-management applications. It is designed to provide high current load capability, high switching speed, and low Rdson. It is particularly suitable for applications requiring low on-resistance and high blocking voltage, such as DC-DC converters, load switches, and battery protection circuits. The device can also be used in high-efficiency audio and video systems, computers, and heaters.
In summary, the AO4447AL is an advanced FET that features both high drain-source blocking voltage and low on-resistance. It is an N-type enhancement mode MOSFET that is best suited for numerous power management applications, such as DC-DC converters, battery protection circuits, and load switches. Its fast switching speed and low gate charge make it a perfect choice for high-efficiency audio and video systems, computers, and heaters.
The specific data is subject to PDF, and the above content is for reference
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