AO4423L_102 Allicdata Electronics
Allicdata Part #:

AO4423L_102-ND

Manufacturer Part#:

AO4423L_102

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 8SOIC
More Detail: P-Channel 30V 15A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4423L_102 datasheetAO4423L_102 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5560pF @ 15V
Vgs (Max): ±25V
Series: --
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Description

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AO4423L_102 is a high-voltage, high-performance n-channel enhancement-mode lateral MOSFET. It offers excellent wide dynamic range of bias voltage, with 7V common-source, staggered gate threshold voltage and optimal gate voltage range of 7V, making it suitable for a wide array of applications such as power and portable electronic devices. The device features excellent current carrying capability, with a low RDS(on), a low drain-source breakdown voltage and low thermal resistance.

Application Field:

AO4423L_102 is ideal for power management applications such as voltage regulation, battery chargers, DC-DC converters, motor drives, and others. It is also suitable for consumer appliances, such as mobile phones, tablets, and audio amplifiers. Additionally, the device can be used in automotive applications such as electronic power steering and transmission control systems. The device is also suitable for industrial applications, such as compressors, vacuum pumps, and other high-power control systems.

Working Principle:

The AO4423L_102 is composed of a semiconductor material, typically silicon, doped with impurities to create a n-channel. When a control voltage is applied to the gate, it creates a strong electric field that attracts the charge carriers, either electrons or holes, to the gate in an enhancement-mode arrangement of operation. As a result, a drain-source current is generated up to the point where the gate-to-source voltage, VGS, equals zero. The device has a 7V common-source, staggered gate threshold voltage, making it suitable for multiple applications.When the gate voltage exceeds the threshold voltage, the drain-source current is increased exponentially. This is called “linear region” of operation because the drain-source current, IDS, is linearly proportional to the gate-to-source voltage.In the linear region of operation, the MOSFET is commonly used as an amplifier. As the gate-to-source voltage increases, the drain-source current increases gradually and the device acts as an inherently linear amplifier. The linear region of operation is limited to a certain gate-to-source voltage range.The AO4423L_102 also has a low RDS(on). This means that the device has a low resistance when on, and the input impedance is high so very little power is dissipated. This makes the device highly efficient as very little power is wasted as heat.The device also has a low drain-source breakdown voltage and a low thermal resistance, making it suitable for a wide range of applications. This low RDS(on) and low thermal resistance also ensure that the device operates reliably and provides good performance.Overall, the AO4423L_102 is an excellent choice for a variety of applications. It has excellent current carrying capability, with a low RDS(on), wide dynamic range of bias voltage, and low thermal resistance. It is also suitable for automotive and industrial applications, as well as consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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