AO4430L_102 Allicdata Electronics
Allicdata Part #:

AO4430L_102-ND

Manufacturer Part#:

AO4430L_102

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 8SOIC
More Detail: N-Channel 30V 18A (Ta) 3W (Ta) Surface Mount 8-SOI...
DataSheet: AO4430L_102 datasheetAO4430L_102 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7270pF @ 15V
Vgs (Max): ±20V
Series: --
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Description

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The AO4430L_102 is an N-Channel Enhancement Mode Por-sama Power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It has a breakdown voltage of 26V and features a fast switching speed and good on-state conductivity. It is designed to meet the requirements of automotive applications.

Application Field

The AO4430L_102 MOSFET is widely used in automotive systems. It is mainly used for driving and controlling the motor current in car air conditioners, fuel injectors and various other automotive appliances. It can also be used for high-frequency switching applications, such as DC-DC converters, rectifiers, inverters and various other electronic circuits.

Additionally, the AO4430L_102 MOSFET is suitable for use in solar energy applications, such as solar cell controllers and inverters, as well as in general power switch and motor drive applications, such as motor controllers and smart cars.

Working Principle

A basic MOSFET is made up of four layers: Source, Gate, Drain, and Body (or substrate). When a voltage is applied to the gate, it creates an electric field that causes the electrons to flow from the Source to the Drain. This field causes a change in the properties of the MOSFET, resulting in a current passing through it.

The AO4430L_102 MOSFET works by controlling the current between the gate and drain terminals. In an open state, the gate terminal is connected to ground via an internal resistor and there is no current flow between the source and drain as the MOSFET is blocked. When a positive voltage is applied to the gate terminal, the internal resistor is broken, allowing current to flow from the source to the drain.

In an open state, the AO4430L_102 provides very low on-state resistance, which helps in reducing the power dissipation and increasing the efficiency of the circuit. In addition, its fast switching speed ensures that the desired output is achieved quickly and accurately.

The AO4430L_102 MOSFET is designed for a wide range of applications due to its reliable performance and low profile. It is a great choice for automotive and solar energy applications due to its fast switching speed and low on-state resistance.

The specific data is subject to PDF, and the above content is for reference

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