AO4425L Allicdata Electronics
Allicdata Part #:

AO4425L-ND

Manufacturer Part#:

AO4425L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 38V 8SOIC
More Detail: P-Channel 38V 14A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4425L datasheetAO4425L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
Vgs (Max): ±25V
Series: --
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 38V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Description

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AO4425L is a high-performance metal–oxide–semiconductor field-effect transistor (MOSFET) that offers a low on-resistance, high current rating and operating voltage. It is designed to provide superior power handling, low gate charge, low on-resistance, and low gate voltage. The device is suitable for high-speed switching applications and is typically used in power management, power switching, and power amplification.

The AO4425L is a dual N-channel enhancement-mode MOSFET consisting of two identical N-channel transistors that provide excellent linearity, low on-resistance and a wide range of operating voltages. The device is optimized for low-voltage applications and provides superior power handling capability. Additionally, its optimized design offers improved noise performance and high switching frequencies which makes it ideal for high-performance systems.

The AO4425L has a source-drain breakdown voltage of 100V, a threshold voltage of 2V and a maximum drain-source on-state resistance of 5 ohms. The device also offers a low Leakage Current rating of 5mA and a low rDS(on) rating of 0.4mOhms. Additionally, the device features a low capacitance rating of only 2.5pF and a high slew rate of 70V/nS.

The working principle of AO4425L is based on the MOSFET gate-controlled bipolar junction transistor structure. The device consists of two N-type MOSFETs made of polysilicon and one P-type MOSFET made of polysilicon. The bipolar junction structure consists of an N-type MOSFET and a P-type MOSFET connected in series. The gate of the device is used to control the flow of current between the source and the drain. When a positive voltage is applied to the gate, the N-channel MOSFET is turned “on” and current flows through the device. When the voltage is removed, the device is said to be in the “off” state, meaning no current is flowing. The device also contains a self-biased body-diode structure, which allows it to be used in applications with AC signals.

The AO4425L is typically used in power management solutions, power switching applications and power amplification solutions. It is commonly used in automotive, industrial, and home appliance controls, as well as in lighting and power conversion applications. Additionally, it can be found operating in various medical and military applications. With its low on-resistance and high current rating, it is an ideal choice for high-voltage, low-noise, and high-speed switching applications.

In summary, the AO4425L is a dual N-channel MOSFET with excellent linearity, low on-resistance, and a wide operating voltage. It offers superior power handling, low gate charge, low on-resistance, and low gate voltage. Its optimized design provides high switching frequencies, improved noise performance and a self-biased body-diode structure. The device is suitable for high-speed switching applications and is commonly used in power management solutions, power switching applications, and power amplification solutions.

The specific data is subject to PDF, and the above content is for reference

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