Allicdata Part #: | AO4466L-ND |
Manufacturer Part#: |
AO4466L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 8SOIC |
More Detail: | N-Channel 30V 9.4A (Ta) 3.1W (Ta) Surface Mount 8-... |
DataSheet: | AO4466L Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 9.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AO4466L is a N-Channel Enhancement Mode MOSFET that is typically used for switching applications such as amplifiers, power supplies, DC-DC converters and for other circuit designs requiring low on-resistance and fast switching. It is suitable for use in high-efficiency process controls, scanners and protection systems in which transient protection and high speed switching are important. The AO4466L is designed with a low on-resistance R&D smoothing algorithm which makes it ideal for high-speed switching applications.
The AO4466L is available in a TO-220 package and can handle currents up to 3 Amps. It has a gate-to-source voltage rating of up to 20 V. It is capable of switching frequencies up to 13 MHz and features a low gate threshold voltage of only 1.5 V. This makes the AO4466L capable of switching at very high speeds and providing a low-noise, compact solution for many circuit designs.
The AO4466L is a N-Channel Enhancement Mode MOSFET which means that it is a type of transistor that uses a semiconductor material with a gate electrode to control the current flow through a channel between the source and the drain. When no voltage is applied to the gate electrode, the channel is pinched off and the current between the source and drain is effectively blocked. When a voltage is applied to the gate electrode, the channel opens and current can flow between the source and drain.
The working principle of the AO4466L is based on the two-terminal model which states that when a positive voltage is applied to the gate of the MOSFET a strong electric field appears across the source-to-drain channel. This electric field attracts charges onto the surface of the channel and creates a formed conducting channel between the source and drain. This process is known as "channel enhancement". As the voltage at the gate increases, the charge density increases and the current flow between the source and drain increases accordingly.
In terms of its application field, the AO4466L can be used in a variety of switching applications such as power supplies, DC-DC converters, amplifiers, control circuits and motor control circuits. Additionally, it can be used in switching applications requiring high speed, low noise and low power dissipation such as RF amplifiers, microwave transmitters, medical devices and process control systems.
The AO4466L is ideal for high efficiency systems where transient protection and high speed switching are important. It has a low gate threshold voltage of only 1.5 V which makes it possible to switch at very high speeds. Additionally, its low on-resistance RD smoothing algorithm makes it the perfect choice for high-speed switching applications. The AO4466L is available in a TO-220 package and is capable of handling currents up to 3 Amps.
The specific data is subject to PDF, and the above content is for reference
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