AO4468 Allicdata Electronics
Allicdata Part #:

785-1038-2-ND

Manufacturer Part#:

AO4468

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 10.5A 8SOIC
More Detail: N-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8...
DataSheet: AO4468 datasheetAO4468 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AO4468 is a single-channel N-channel enhancement-mode power MOSFET. It is fabricated with MOSFET technology and has high field-effect mobility. This makes it highly reliable and suitable for applications that require high-speed operation.AO4468 is widely used in DC/DC converters, switching power supplies, motor control circuits, and other general power amplifiers. The maximum drain current of AO4468 is 12A and the maximum drain-source voltage is 40V. The device typically can achieve 25V breakdown voltage and low on-resistance of 4mΩ.AO4468 is a great choice for customers who are looking for low on-resistance and very high packing density. It is a Highly Reliable for System Applications, thanks to its PGB technology, where P stands for Power MOSFET and GB stands for Going Bottom technology. GB technology is a low thermal resistance package that allows for low on-resistance when operating at high current. The device is also RoHS compliant, making it environment friendly.The working principle of AO4468 is based on the fact that when a voltage is applied to the drain terminal, a voltage is generated between the source and the drain terminals due to the depletion region, which creates an electric field. This electric field induces a current to flow through the channel, creating a source-drain current. By controlling the voltage applied to the gate terminal, the electric field can be adjusted and the current flowing through the channel can be changed accordingly. This allows the user to control the amount of current flowing through the MOSFET and hence the power dissipated from the load.In conclusion, AO4468 is an excellent choice for applications that need high-speed operation and reliable device. Its unique structure and low thermal resistance package ensures low-on resistance and very high packing density. The device is also RoHS compliant, making it environment friendly. As mentioned previously, AO4468 is widely used in DC/DC converters, switching power supplies, motor control circuits, and other general power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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