AO4488L_101

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.7W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6800pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	112nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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AO4488L_101 is a Field Effect Transistor (FET) device and is categorized within the single MOSFETs group. FETs are a type of transistor that use an electric-field to control a current’s movement between two terminals. By controlling the direction and amount of current flow, FETs can act as a switch or a voltage gain amplifier. AO4488L_101 is an N-channel enhancement mode MOSFET, which means that current flow through the device is controlled by an electric field. It comes with a number of specifications such as maximum voltage range from -20V to 100V, maximum power dissipation Pd of 0.58W, and an on-resistance of 0.099Ω. These characteristics make it suitable for a wide range of applications including power management, repair, prototyping and more.AO4488L_101 consists of three terminals, Source, Drain and Gate. The Source and Drain terminals are the main and second ends of the FET where a voltage is applied respectively, while the Gate terminal is used to control the flow of current through the device. When a voltage is applied to the Gate terminal, the device is enabled, and current flow between the Source and Drain terminals. The operation of AO4488L_101 is based on the working principle of an insulated-gate field-effect transistor (IGFET). In an insulated-gate FET, the movement of electrons is enabled or disabled by applying a potential across the Gate-to-Source (G-S) junction. When the Gate terminal is negative relative to the Source, then electrons travel from the Source to the Drain, enabling current flow through the device.In addition, AO4488L_101 incorporates a special circuit called “diode-connected” that helps protect the device from reverse voltage. The diode-connected circuit will open up if a reverse voltage is applied, thus preventing current from flowing backward. AO4488L_101 also has a body diode with a forward conductivity rating of 1.3A and a reverse leakage current of 0.25mA. This helps protect the device from current spikes and provides thermal stability in high-frequency applications.AO4488L_101 can be used in a wide range of applications such as high-side switch, power supply, audio amplifier and motor control. They are also commonly used in digital circuits, where low gate capacitance provides low-voltage logic levels that are ideal for switching and other digital operations. One of the key advantages of using AO4488L_101 is that it has a very low on-resistance, which makes it more efficient than other FET types. Additionally, the body diode helps reduce power loss resulting from reverse current flow and also helps prevent device failures due to thermal spikes.Overall, AO4488L_101 is an N-channel enhancement mode MOSFET with low on-resistance and a body diode to protect against reverse voltage. This makes it suitable for a range of applications such as high-side switch, power supply, audio amplifier and motor control. The device’s low gate capacitance also makes it ideal for digital circuits.

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