AO4498EL

Vgs(th) (Max) @ Id:	2.3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2760pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5.8 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AO4498EL Application Field and Working Principle

The AO4498EL is a N-Channel enhancement-mode power MOSFET device that has been specifically designed for automation applications. This device is specifically designed for automotive applications and allows for high power density solutions in cost-sensitive applications, such as automotive, industrial, and consumer applications. Additionally, this device is commonly used for power supply regulation, switching, and motor control applications.

The AO4498EL is an enhancement mode device with a breakdown voltage of 4.5V and offers an excellent on-state performance and a low gate-source threshold voltage. It is a single-channel device with an adjustable current operating range of 0.23-1.6A and a maximum operating voltage of 28V. This device has very low output capacitance, which allows for low switching loss in DC-DC converters. The device features integrated gate drain ESD protection as well as on-state EMI suppression structures, which allows for improved EMI performance.

The AO4498EL is a power MOSFET device that utilizes an enhancement-mode operation to turn on and off the current flow in its channel. The gate of the device is used to provide a control voltage for the MOSFET, which is then used to control the current flow in the MOSFET channel. The gate voltage needs to be at least equal to the threshold voltage (Vgs) of the MOSFET to turn on the channel. Once the channel has been turned on, the current will flow through the channel as determined by the drain to source voltage (Vds).

The AO4498EL is a great choice for many applications due to its excellent on-state performance and low gate-source threshold voltage. It can be used in a wide range of applications, including power supply regulation, switching, and motor control applications. This device also features integrated gate drain ESD protection and on-state EMI suppression structures, which allow for improved EMI performance. Additionally, the device has a very low output capacitance, which allows for low switching loss in DC-DC converters. Overall, the AO4498EL is an excellent choice for automotive, industrial, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description