| Allicdata Part #: | 785-1339-2-ND |
| Manufacturer Part#: |
AON6403 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH 30V 21A 8DFN |
| More Detail: | P-Channel 30V 21A (Ta), 85A (Tc) 2.3W (Ta), 83W (T... |
| DataSheet: |  AON6403 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9120pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 196nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 85A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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AON6403 is a low-voltage, small-size, N-channel MOSFET. It is widely used in portable electronics, battery management systems, and other applications where a small footprint device is a need. It is composed of a single-drain marking technology from Taiwan Semiconductor, and its architecture allows for great scalability with limited area occupation. This paper will be focusing on the applications and working principles of AON6403.
Applications
The low operating voltage range, small size, and low on-resistance make AON6403 a great choice for portable electronics, battery management systems, or any other applications where a space-efficient and cost-effective device is the need. With the on-resistance range from 0.15Ω to 0.45Ω and an exceptionally low gate charge of 18nC max, it is perfectly suitable for portable electronics. It can deliver up to 1A continuous current, with a blocking voltage of 10V max.Secondly, AON6403 has an excellent power efficiency. It has an RDS(ON) at 4.5V on the order of 0.3Ω, which is one of the lowest RDS(ON)s available in a small size device. This low on-state resistance allows it to be used in low power devices, improving their efficiency and reducing power consumption. Moreover, its low gate charge of 18nC max also helps lower the overall power consumption as it reduces gate matter as well as switching losses.
Finally, with the use of lead-free and eco-friendly packaging process, AON6403 offers superior thermal reliability which is essential for most HDD, SSD and other consumer applications. The package features optimized heat dissipation, enabling it to offer reliable operation in extended temperature ranges.
Working Principle
AON6403 is composed of a single drain marking technology from Taiwan Semiconductor, which is also known as a “floating gate” technology. To understand the working principle of this device, it is important to first understand the design of floating gate. A floating gate is a device wherein the source, middle point and drain are connected to a metal layer which is isolated from the substrate by an insulation layer. This insulation layer is used as a gate and can be used to control the current flow between the source and drain.In case of AON6403, the insulation layer consists of a tunnel oxide and a Floating Gate (FG). The tunnel oxide varies in potential and is used to create a depletion region in the substrate which can change its resistance. The FG is responsible for the conduction of electric current and its potential is applied using a voltage source. This FG and the tunnel oxide, forming the insulation layer between the source and the drain, allow AON6403 to operate as a two-terminal device with a conductive channel in between.
When a positive voltage is applied to the source, positive voltage is also applied to the tunnel oxide. This causes the depletion of electrons in the source and, thus, forms a conductive channel between it and the drain, thereby allowing current to flow. When the electric potential of FG and the tunnel oxide is equal, the flow of current is interrupted, thus, cutting off any further current flow.
AON6403 is a small size N-channel MOSFET with a low operating voltage and low on-resistance. Its architecture uses a single-drain marking technology with a lead-free and eco-friendly packaging process. It is suitable for use in portable electronics, battery management systems and other applications where a space-efficient and cost-effective device is a need. Its small size, low operating voltage, and excellent power efficiency make it a great choice for these applications. Moreover, its working principle based on a floating gate technology makes it a reliable and efficient device.
The specific data is subject to PDF, and the above content is for reference
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