AON6407 Allicdata Electronics

AON6407 Discrete Semiconductor Products

Allicdata Part #:

785-1421-2-ND

Manufacturer Part#:

AON6407

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 32A 8DFN
More Detail: P-Channel 30V 32A (Ta), 85A (Tc) 7.3W (Ta), 83W (T...
DataSheet: AON6407 datasheetAON6407 Datasheet/PDF
Quantity: 75000
Stock 75000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 7.3W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3505pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AON6407 is a type of Field-Effect Transistor (FET) that is commonly used as an input or output device in a range of digital or analog circuits. While it is classified as a Single-Gate Field-Effect Transistor (SFET), AON6407 is fully compatible with standard I/O operations for a range of logic, analog, mixed-signal, and high-frequency applications.

The AON6407 is a credit to its manufacturers, AOS, and its structure includes several unique features, such as ultra-low power consumption, low RDS(on), and high resistance levels. This makes it an ideal choice for a range of different applications, including DC-DC power converters, motor and module drivers, and automotive lighting systems, among others.

The AON6407 is built on a Silicon On Insulator (SOI) platform that is specifically designed to reduce leakage current and power consumption, while still providing excellent switching performance. The transistor also includes an integrated electro-static discharge (ESD) protection circuit, which helps to protect the device from damage due to high voltage spikes or other electrical overshoots.

In terms of its working principle, the AON6407 is a type of N-Channel MOSFET with an internal gate structure, which is designed for source-gate and drain-gate configurations. When the gate voltage of the AON6407 is increased, the semiconductor channel is opened and the current is allowed to flow through the device. This can be described as the transistor being “on”. When the gate voltage is reduced, the channel is closed, and current is prevented from flowing through the device. This is known as the transistor being “off.”

The AON6407 also has a higher voltage, higher current, and higher switching frequency than many other FETs, making it an ideal choice for applications such as power conversion, motor and module driving, automotive lighting systems, and even some mobile and wireless devices. Its impressive features, combined with its low cost and ease of use, make it an attractive option for a range of commercial, industrial, and consumer applications.

In summary, AON6407 is a type of Field-Effect Transistor (FET) that offers low power consumption, low RDS(on), and high resistance levels, making it an ideal choice for a range of different applications. It is built on a Silicon On Insulator (SOI) platform that helps reduce power consumption, while still providing excellent switching performance. Additionally, the AON6407 has a high voltage, high current, and high switching frequency, which makes it an excellent choice for applications such as motor and module driving, automotive lighting systems, and mobile and wireless devices.

The specific data is subject to PDF, and the above content is for reference

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