AON6518

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The AON6518 is a single-channel Field Effect Transistors (FET) or MOSFET device. It is manufactured in a low voltage low current process, with advance and low power capabilities. It is a small-signal FET suitable for high frequency switching and amplifying applications. It is an advanced EnFet device that has high power gain and excellent input-output characteristics.

AON6518, due to its low on-resistance and low input capacitance, is widely used in applications that require high-speed switching such as DC-DC conversion, power supply, motor control, etc. It is also widely used in various high-frequency RF switching, linear processing, communications and other applications.

The AON6518 consists of two different, symmetrical transistor structures connected between Gate, Drain, and Source, namely pMOS and nMOS transistors. Each transistor is composed of a Source/Drain region and a Gate area, as shown in the figure below.

The AON6518 uses the TSMC Low Voltage Low Current (LVLC) process technology. This transistor has more precisions than the ordinary FETs. This technology features advanced process optimizations, such as low on-resistance, low drift and low transient current for greater performance. The advanced process also reduces the overall voltage residual, which is very beneficial in high power applications.

The Gate of the AON6518 is separated from the source-drain regions by a thin gate oxide layer. A thin dielectric layer prevents gate leakage current from getting into the source/drain regions. The inversion layer formed from the gate is used to control the flow of current between the source and drain. The threshold voltage of the transistor is adjustable with an external voltage applied to the Gate.

When the voltage applied to the Gate is below the threshold voltage, the current flow between the source and the drain is blocked. When the voltage applied to the Gate is higher than the threshold voltage, the current flows between the source and the drain.

In most cases, this transistor is used in high-frequency or high-power circuits. Its small size enables easy integration into the circuit without needing a large amount of board area. The AON6518 is most often used for power amplification, signal filtering, digital signal processing, and other low-level switching applications.

AON6518 has excellent input and output characteristics. It has a high input impedance which allows more energy from the source to reach the drain as compared to a traditional MOSFET device. It also has a low output impedance which minimizes energy loss from the drain side. This makes it very suitable for applications that require high power.

The current and power handling capability of the AON6518 is quite impressive. It is capable of handling current up to 120mA and voltage up to 28V. This makes it suitable for applications that require high power handling capacity. The device also has excellent temperature performance which makes it suitable for applications that require stable operation.

Overall, the AON6518 is a versatile field effect transistor. It offers excellent performance when used in applications such as amplifiers or power supply circuits. Its high power handling capacity and low on-resistance makes it ideal for a wide variety of applications. Its small size helps minimize board area while still delivering high performance. It also has outstanding temperature performance, making it suitable for use in many industrial applications. This versatile device is sure to find many useful applications in the future.

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