AON6504_001 Allicdata Electronics
Allicdata Part #:

AON6504_001-ND

Manufacturer Part#:

AON6504_001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 8DFN
More Detail: Surface Mount 8-DFN (5x6)
DataSheet: AON6504_001 datasheetAON6504_001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads
Description

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The AON6504_001 is a single-channel power MOSFET, developed by Alpha and Omega Semiconductor. It is designed for high-efficiency, low-voltage conversion applications, such as low power switch mode power supplies and handheld device power management systems. The device\'s small form factor and high current capacity make it well-suited to space constrained applications, such as PCs and consumer electronics.

The AON6504_001 contains an ultra-low on-resistance, normally-open N-channel depletion mode field-effect transistor (FET). It is built with a proprietary trench gate oxide process, which has superior current handling capabilities compared to a standard FET. This FET is primarily intended for electronic load or switch applications, including low-side switch, high-side switch, power transistor, and load switch.

The AON6504_001 is composed of a single drain, source and gate lead. Its maximum drain current is 30A and its on-state resistance is as low as 55mΩ, allowing for low voltage drop and greater power efficiency when switching heavy loads. Its maximum gate peak current is 50mA, meaning it is capable of switching large currents quickly. Additionally, the device\'s total gate charge is only 2nC.

The AON6504_001 is a gate oxide-trench MOSFET that allows for higher current carrying capacity and lower power loss compared to traditional MOSFETs. This is because it features a low gate-drain charge to achieve a low on-resistance. Furthermore, its drain-source breakdown voltage of 70V extends the range of applications even further, allowing the device to be used in a wide variety of power management systems.

The AON6504_001 is an ideal power MOSFET for a variety of applications, including power supplies, motor controls, lighting controllers and automotive systems. It is designed for low on-state resistance and high efficiency, allowing it to operate with higher current than a traditional MOSFET. Additionally, its low gate charge enables it to switch large currents quickly, making it well-suited to applications that require fast switching speed. The device\'s small form factor and low thermal resistance make it suitable for space-constrained applications, such as PCs and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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