AON6794

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AON6794 is a silicon-based, normally off, single-source, field-effect transistor (FET). It is designed for load switch and general-purpose switching applications and is available in a small, exposed-pad (EP) package. This transistor can handle up to 8V of gate voltage and has a maximum drain current of 250 mA. It features a low threshold voltage and a robust design, making it well-suited for use in portable electronics.

AON6794 is an enhanced sub-threshold, normally off, or “enhanced turn-off,” single-gate field-effect transistor (FET). It’s designed with a low threshold voltage and an integral anti-parallel body diode. The integrated body diode allows the AON6794 to be used for a variety of applications, including load switches, battery switches, and load switches in surge protection circuits. It can also be used as a general-purpose FET for a variety of low-current switching operations. In addition, the AON6794 is built with a level-shifted gate structure, allowing it to be operated at high voltage.

AON6794 has an exposed pad (EP) package, which makes it easy to be soldered in circuit boards. Since it’s exposed, the pads of AON6794 also offer an excellent thermal conductivity for heat removal. This makes AON6794 suitable for continuous-duty operations in applications such as computers and consumer electronics. Moreover, because of its low threshold voltage and robust design, AON6794 can be used in low-side switching operations.

When the gate of AON6794 is open, the metal-oxide-semiconductor technology (MOS) prevents the current from flowing between the source and the drain. In this state, the source acts as an open circuit and the drain acts as a short circuit. This is because the metal oxide layer that covers the surface of the transistor blocks the charge carriers from passing through. Thus, no current is able to flow through the transistor.

When the gate of an AON6794 is driven with a voltage, the metal oxide layer that covers the surface of the transistor decreases its thickness, allowing the charge carriers to pass through. This phenomenon is referred to as “threshold voltage” or “channel opening voltage.” At this point, current starts to flow between the source and the drain, given that the voltage is sufficient to overcome the threshold voltage.

The threshold voltage of AON6794 is very low, which makes it well-suited for a variety of applications. For instance, AON6794 can be used for low-side switching operations, for load switches in surge protection circuits, for general-purpose FETs, and more. The level-shifted gate structure of AON6794 also enables it to be operated at high voltage.

The integral anti-parallel body diode in AON6794 ensures that the transistor is able to handle inductive loads, making AON6794 particularly suitable for automobiles, home appliances, and other applications that involve high-power inductive loads. The low threshold voltage and robust design of the transistor make AON6794 a good choice for low-side switching operations. In addition, the exposed pad (EP) package makes AON6794 easy to be soldered onto a circuit board.

In conclusion, the AON6794 is a versatile silicon-based, normally off, single-gate field-effect transistor that is built to handle a wide variety of applications. It offers a low threshold voltage and a robust design, making it well-suited for portable electronics and for use in low-side switching operations. The integrated anti-parallel body diode also ensures that AON6794 can handle high-power inductive loads. Finally, the EP package of the AON6794 makes it easy to install on circuit boards and offers excellent thermal conductivity for heat removal.

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