AON7406

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N-channel enhancement-mode field-effect transistors, or MOSFETs, are widely used in electronic circuits and are roughly analogous to voltage-controlled switches. AON7406 is an advanced, complex N-channel MOSFET manufactured by Alpha-Omega Semi-Conductors, Inc. This product is suitable for a variety of applications due to its compactness, high integration, low power consumption, and excellent electrical performance. This article will explore the application field and working principle of the AON7406.

Application Field

The AON7406 is a single high-voltage MOSFET that provides a large component density with low on-state resistance. It is ideal for use in high-side load switching, DC-DC voltage conversion, and other power management applications. It is suitable for a variety of voltage levels, including 5V, 12V, 24V, and 48V.

Due to its small size and high power handling capacity, the AON7406 is particularly well-suited to applications where space is at a premium such as automotive, industrial, and consumer electronic devices. It can also be used in applications where there is a need for high efficiency, such as solar cells, electric vehicles, and medical devices.

Construction and Working Principle

The AON7406 utilizes a trench MOSFET structure, which consists of a heavily doped source and drain regions, separated by a thin layer of silicon dioxide. When no voltage is applied to the gate, these regions form a tunnel and any electronics current must pass through them. By applying a voltage to the gate, the amount of current that can pass through the device is controlled.

The device’s N-Channel MOSFET structure is composed of two semiconductor layers, one p-type and the other n-type. Current only flows when the gate, which is connected to a voltage source, is activated. When the gate is turned on, it attracts the heavily doped N-Channel regions and creates a low-resistance region. This allows current to flow from the source to the drain.

Performance Parameters

The AON7406 is capable of providing a wide range of power handling capabilities, with a maximum drain-source voltage rating of up to 150V and a maximum drain-source current rating of 8A. Its on-resistance is extremely low, with an Rds (on) as low as 0.2mΩ, allowing for high efficiency operation.

Other notable performance parameters include an operating temperature range of -55°C to 150°C, a gate-source voltage of ±20V, and a maximum junction temperature of 175°C.

Conclusion

The AON7406 is a high-performance single N-channel MOSFET from Alpha-Omega Semi-Conductors, Inc. It is suitable for a wide range of applications due to its compactness, high integration, low power consumption, and excellent electrical performance. The device utilizes a trench MOSFET structure, in which current flows through the device when a voltage is applied to the gate. It offers excellent performance parameters, including a maximum drain-source voltage of up to 150V, a maximum drain-source current of 8A, and an on-resistance as low as 0.2mΩ.

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