AON7410L_101

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AON7410L_101 Application Field and Working Principle

AON7410L_101 is a single power field effect transistor (FET) that offers excellent on-resistance and excellent capacitance characteristics, including low saturation voltage (V_DSS) and high breakdown voltage (V_DSS). This single FET is designed for operating temperature ranges from -55°C to 150°C. It is suitable for use in high voltage, high current applications such as battery management systems and DC-DC power converters. It offers low gate and body capacitances and high on-resistance, which make it suitable for post-saturation switching applications.

AON7410L_101 is part of the AON7410L_101 family of single FETs, which is a product portfolio of power FETs for use in a variety of applications, including DC-DC power converters, motor controllers, and lighting control modules. The devices are available with a wide range of gate drive supply voltage (V_GS+) options to meet the requirements of a wide range of applications.

Working Principle

AON7410L_101 operates by way of the four-layer FET structure. In this structure, the gate is sandwiched between two conductive contacts and the gate controls the current flowing between the source and drain. The gate voltage (V_GS+) needs to exceed the gate turn-on threshold before the FET can be turned on and current can flow through the FET. AON7410L_101 has an excellent gate turn-on threshold voltage (V_GS^th) of 1.8 V and a gate turn-off threshold voltage (V_GS^th) of 0.8 V. This allows the device to accurately limit or control the current.

AON7410L_101 also has low capacitance, which reduces the time required to turn on and off the device. This makes it ideal for fast switching applications, such as switching high-current loads in a DC-DC converter. Low capacitance is particularly important when high-frequency operation is required.

The AON7410L_101 is also designed to minimize ringing on the output signal. This is achieved by using a minimized on-state resistance (R_DSon) combined with a low gate-to-drain voltage (V_GD) differential. This helps to reduce high frequency switching losses, thus improving overall efficiency. The device also features a low total gate charge (Q_g), which contributes to improved efficiency and reliability.

The AON7410L_101 has a low thermal resistance, which allows it to safely handle large amounts of power. The device has a maximum drain current (I_D) of 2.5 A, which makes it suitable for high current applications. The device is also designed to meet the requirements of numerous safety and regulatory standards, including UL1977 and IEC61377.

Applications

AON7410L_101 is a single FET device suitable for a variety of applications, including:

• DC-DC power converters
• Motor controllers
• Lighting control modules
• Battery management systems
• High voltage, high current applications

AON7410L_101 is a good choice for post-saturation switching applications. It features low gate and body capacitances combined with a low on-state resistance, which make it suitable for fast switching applications. The device has a low thermal resistance, which allows it to safely handle large amounts of power. The device is also designed to meet the requirements of safety and regulatory standards, such as UL1977 and IEC61377.

In summary, AON7410L_101 is a single FET device suitable for a variety of high voltage and high current applications. It offers excellent on-resistance and capacitance characteristics coupled with a low gate turn-on and turn-off threshold voltage, which make it an ideal choice for post-saturation switching applications. The device has a low thermal resistance, which allows it to safely handle large amounts of power. Furthermore, the device is designed to meet the requirements of numerous safety and regulatory standards.

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