Allicdata Part #: | AOTF2916L-ND |
Manufacturer Part#: |
AOTF2916L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 5A TO220F |
More Detail: | N-Channel 100V 5A (Ta), 17A (Tc) 2.1W (Ta), 23.5W ... |
DataSheet: | AOTF2916L Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 23.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta), 17A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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AOTF2916L has a wide range of application fields in the areas of power electronic circuit, radio frequency (RF) and telecommunication. AOTF2916L is a N-channel enhancement-mode lateral MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is specially designed for high quality audio amplification in systems with relatively low power requirements. It has an excellent balance between speed, on-resistance and off-resistance, making it an attractive choice for a variety of applications. AOTF2916L is suitable for both analog and digital applications, which makes it quite versatile.The AOTF2916L has a fairly simple operating principle. In single-ended operation, the drain is connected to the source and voltage is placed across the gate-source of the device. When the gate-source voltage is increased beyond a certain threshold value, the transistor will become "on" and will continue to increase with increasing gate voltage up to the drain-source voltage.AOTF2916L is usually operated as an enhancement-mode FET, meaning that it requires a positive voltage between gate and source to switch on the channel. AOTF2916L has a low operating and off-state drain-source resistance, making it ideal for use in low-power applications. The device also has excellent output characteristics which include low voltage gain, low input capacitance and low output capacitance.AOTF2916L provides excellent linearity and dynamic performance, making it an ideal choice for many audio applications. It also has low gate feedback for quieter operation, making it a very suitable choice for low-distortion distortion circuits. The device also features a high current drive capability, making it suitable for high-power applications.The device typically requires a 20V gate drive and has a maximum drain-source voltage of 20V. AOTF2916L offers good temperature stability and a wide range of operating temperatures. The total power dissipation of the AOTF2916L can reach up to 20 Watts.AOTF2916L is designed for use in high-quality audio amplification with lower power requirements in systems. Its ease of use, excellent linearity and dynamic performance make it an ideal choice for a variety of applications. The device offers good temperature stability and wide operating temperatures, and its low gate feedback makes it suitable for low-distortion circuits. Its current drive capability makes it an attractive choice for high-power applications.The specific data is subject to PDF, and the above content is for reference
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