Allicdata Part #: | 785-1788-ND |
Manufacturer Part#: |
AOTF12N60L |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 12A TO220F |
More Detail: | N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF12N60L Datasheet/PDF |
Quantity: | 964 |
1 +: | $ 1.05210 |
10 +: | $ 0.93114 |
100 +: | $ 0.73609 |
500 +: | $ 0.57086 |
1000 +: | $ 0.45068 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOTF12N60L is a type of field effect transistor (FET) that belongs to the class of single enhancement mode MOSFETs. It is a 12V N-channel type with a maximum current rating of 60A. This FET is ideal for use in power management applications, power conversion and motor control systems.
Field effect transistors are a type of transistor that has three terminals – source, gate and drain, as opposed to the four terminals of a regular bipolar transistor. FETs allow current controlled by electric fields, which allows them to be used as switches, amplifiers, and in DC-DC conversion. FETs are used in a variety of applications such as power supply systems, audio amplifiers, HVAC systems and robotics.
The AOTF12N60L is a single enhancement mode MOSFET, which means that the device is permanently in “on” state until the gate voltage is increased sufficiently. This makes the MOSFET act as a low resistance switch when high. These types of transistors are beneficial in applications such as DC-DC conversion, where it is important to be able to control power supply accurately.
The AOTF12N60L has a low on-state resistance of 0.045 ohms, and a fast switching speed of 4.5ns. It has a maximum drain-source voltage of 12V, and a maximum drain current of 60A. It is rated for an operating temperature range of -55°C to +150°C and has a high peak thermal resistance of 1.25°C /W.
The working principle of the AOTF12N60L is based on the electrostatic control of the current through the device. The source and drain are connected to opposite ends of a conductive channel, while the gate is connected to a separate terminal. By varying the gate voltage, a buildup of electric field across the device is created, which controls the current between the source and drain. By controlling the electric field, the amount of current that flows through the device can be precisely controlled.
The AOTF12N60L is a powerful FET for high current applications, such as motor drives and automotive control systems. With its low on-state resistance and fast switching speed, it is ideal for use in power management systems, power conversion and motor control systems, as well as other applications where precise and reliable current control is required.
The specific data is subject to PDF, and the above content is for reference
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