AOWF10N60

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The AOWF10N60 is a high-voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is specifically designed for high-voltage switching applications like welding, audio amplifiers, industrial and automotive applications.

MOSFETs are made up of an insulated-gate which, when activated, controls the flow of current. The AOWF10N60 has a drain-source voltage rating of 600 Volts and a drain current rating of 10 amps. It also has a static drain-source on-resistance of 0.025 Ohms and a continuous drain current of 7.2 amps.

The output characteristics of a MOSFET are shaped by its body structure. The AOWF10N60 is specifically designed with a temperature-compensated dynamic body diode which ensures maximum efficiency and minimum noise in both forward and reverse operations. This structure also reduces switching losses by allowing for a wide on-state voltage drop variation with drain current.

The device is packaged with a Dual-connect PIN (plug in) package which allows for easy installation and long life operation. The dual-connect design ensures reliable operation of the device in different environmental conditions. The AOWF10N60 also has a built-in protection mechanism which prevents short circuit damage caused by reverse polarity.

The AOWF10N60 has a wide range of applications in both consumer and industrial markets. Some of its applications include AC/DC motor speed control, motor starting, welding and solar inverters. It can also be used in audio amplifiers and automotive applications. The device is ideal for applications which require high-voltage, high-current switching operations.

The AOWF10N60 works by using the electric field created by the gate. A high voltage applied to the gate causes an electric field to be created between the gate and drain, which then attracts mobile electrons from the channel towards the drain. This has the effect of providing a controllable flow of current from source to drain. The gate voltage determines the current from source to drain.

The AOWF10N60 is a highly effective device for any application which requires high-voltage, high-current switching. The wide range of features, like temperature-compensated dynamic body diode and dual-connect PIN package, further make it attractive option for use in a variety of applications.

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