AOWF11S60

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AOWF11S60 is a power semiconductor device that is specifically designed for applications involving high-side load switching in automotive and industrial applications. This power device utilizes a lateral N-Channel power MOSFET structure, with a drain-source voltage rating of VDSS 600V and current rating of ID 11A.

This device is ideal for use in a variety of applications, including lighting, power supply, motor drives, and automotive, which require a power switch with high-side load switching capabilities. While the AOWF11S60 has been specifically designed to be used in automotive applications, it can also be used in a variety of other applications, including industrial and consumer electronics.

The AOWF11S60 utilizes a lateral gate-source structure, which means that two independent, symmetrical gates are connected to one common source terminal. This configuration allows for optimal charge transfer and enhanced temperature stability, which translates to higher reliability of the device. The lateral gates also allow for easier switching of the device at lower gate drive voltage levels.

The AOWF11S60 device has been specifically optimized for use in automotive high side load switching applications. This power device is designed with a low on-resistance value, which ensures that it can switch fast enough to handle on-off cycles of the load without requiring a significant amount of gate drive current. The AOWF11S60 is also designed to handle high current loads, with a rated drain current of up to 11A. This allows the device to be used in a variety of automotive high side switching applications.

In addition to having a low on-resistance value, the AOWF11S60 is also designed with a high breakdown voltage. This ensures that the device can handle a wide range of supply voltages, including high-voltages up to 600V. The device is also designed with an avalanche energy tolerance of 32mJ. This allows the device to handle transient voltages and currents without risk of break down.

The working principle of the AOWF11S60 power device is based on the concept of using a lateral gate structure to control the flow of current. When a gate signal is applied to one of the two gates, a current path is established between the source and drain terminal, while the other gate is kept shut. This allows the AOWF11S60 to act as a power switch, controlling the on-off state of the load.

The AOWF11S60 is also designed with an efficient source-to-drain resistance, which helps to minimize power losses in applications. It also has a low threshold voltage, allowing for optimal switching performance. Finally, the device is designed with its own dedicated variable capacitance, which helps to increase the frequency of operation.

The AOWF11S60 is an ideal power device for high side load switching applications in automotive and industrial systems due to its combination of attributes. It features a low on-resistance value, a high breakdown voltage, an avalanche energy tolerance of 32mJ, an efficient source-to-drain resistance, and a low threshold voltage for optimal switching performance. Additionally, it has its own dedicated variable capacitance to increase its frequency of operation. Taken together, these features make the AOWF11S60 an ideal choice for a variety of applications requiring high-side switching.

The specific data is subject to PDF, and the above content is for reference