AOWF8N50 Allicdata Electronics
Allicdata Part #:

AOWF8N50-ND

Manufacturer Part#:

AOWF8N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 500V 8A TO262F
More Detail: N-Channel 500V 8A (Tc) 27.8W (Tc) Through Hole TO-...
DataSheet: AOWF8N50 datasheetAOWF8N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: TO-262F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1042pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The AOWF8N50 is a type of single-channel N-MOSFET with a surface-mounted, low-power packaged component. It features a TO-252 package, which is designed to provide surface mount technology with maximum power, providing reliable electrical connection in a small surface-mounted package. It is an ideal choice for applications with strict power requirements and high speed signal processing. It is also suitable for automotive applications.

The AOWF8N50 is a vertical channel field-effect transistor (FET) with an N-channel enhancement type, which means it works by collecting current carriers from the source when an external electrical field is applied to the gate terminal. This is a principle called “gate effect”, in which electrons or holes are induced and then the current flows through the channel. The AOWF8N50 can be used both as a switch and as an amplifier depending on its biasing conditions.

The AOWF8N50 has a flatMax drain current of 34A, a maximum gate-source voltage of 8V, and a maximum drain-source voltage of 500V. It also has a forward channel cut-off current of 50mA at a zero gate-source voltage and a maximum temperature rating of 175°C. These parameters give the AOWF8N50 an extremely wide range of applications. It is suitable for use in a variety of applications, such as in battery-powered systems, computer hard drives, power supplies, and power switching circuits.

The AOWF8N50 is commonly used in power management applications, including DC-to-DC conversion and DC-to-AC conversion, as it can handle high currents with very low voltage drop. It can also be used in audio amplification, power factor correction, and voltage regulating circuits. The AOWF8N50 can operate at frequencies up to over 35kHz, making it suitable for switching systems and power supplies. In addition, it is also available in a wide variety of packages, making it suitable for both surface mount technology and through-hole applications.

In summary, the AOWF8N50 is a single-channel N-MOSFET with a surface-mounted, low-power package. It is designed to handle large currents and is suitable for a variety of applications, from audio amplification to power switching circuits. With its wide range of capabilities, the AOWF8N50 is an ideal choice for applications with strict power requirements and high speed signal processing.

The specific data is subject to PDF, and the above content is for reference

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