AOWF7S60 Allicdata Electronics
Allicdata Part #:

AOWF7S60-ND

Manufacturer Part#:

AOWF7S60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 7A TO262F
More Detail: N-Channel 600V 7A (Tc) 25W (Tc) Through Hole
DataSheet: AOWF7S60 datasheetAOWF7S60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: aMOS™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The AOWF7S60 is a super-junction trench MOSFET (metal-oxide-semiconductor field-effect transistor) with a maximum current rating of 60A and a large drain voltage of 700V, making it suitable for applications in switched-mode power supplies (SMPS), AC/DC and DC/DC converters. The device also includes a fast body diode for anti-ringing protection, as well as robust avalanche performance.

The AOWF7S60 is ideal for use in a wide variety of applications, such as solar panels, battery chargers and electric vehicles. The device is well-suited for applications where high efficiency and excellent thermal performance are desired. In addition, the AOWF7S60 offers excellent ESD protection, making it ideal for high power, low voltage applications.

The AOWF7S60 is a high voltage MOSFET that acts as an electronic switch to regulate the flow of current in a circuit. The device switches between two states, an open circuit state and a closed circuit state. When the device is in an open state, no current flows through it; when the device is in a closed state, current flows through it.

The working principle of the AOWF7S60 is based on the fact that when a voltage is applied to the gate of the MOSFET, a channel of mobile electrons is generated. This channel is created by the electric field that is created when the gate voltage is higher than the threshold voltage of the device. The current that flows from the drain to the source of the device is determined by the size of the channel and the amount of voltage applied to the gate.

The AOWF7S60 has a very fast switching time, making it ideal for high speed applications. It also has a low on-state resistance, resulting in higher efficiency and lower overall power consumption. Additionally, the device is quite robust and rugged, making it well-suited for harsh industrial environments. Finally, the AOWF7S60 features a fast body diode, enabling it to provide anti-ringing protection and robust avalanche performance.

The specific data is subject to PDF, and the above content is for reference

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