| Allicdata Part #: | AOWF12N60-ND |
| Manufacturer Part#: |
AOWF12N60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 12A TO262F |
| More Detail: | N-Channel 600V 12A (Tc) 28W (Tc) Through Hole |
| DataSheet: |  AOWF12N60 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-262-3 Full Pack, I²Pak |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 28W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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AOWF12N60 is a metal-oxide-semiconductor field-effect transistor (MOSFET) device which is available in a single package. It has a metal-oxide insulated gate, source and drain Regions.The metal-oxide insulated gate is used to conduct electrons between the source and drain regions. The metal-oxide insulation prevents the accumulation of charges on the gate, which reduces the possibility of shorts or opens.The large surface area of the gate provides improved switching performance when compared with other transistors. The gate of the transistor is typically located near the drain region, which allows faster switching times and better control over the source-drain current.The AOWF12N60 MOSFET provides excellent performance in applications such as motor control, switching power supplies, and other power applications. It can be used in a wide range of applications from high voltage/power to low voltage/low power.The main advantage of the AOWF12N60 MOSFET is its ability to operate at high frequencies, up to 20 kHz, which makes it suitable for use in applications that require high speed switching.The most common application for the AOWF12N60 MOSFET is power supply design and power control. The MOSFET can be used as a switch or regulator in power supplies and is well suited for use in applications that require current or voltage regulation.In terms of working principle, the AOWF12N60 MOSFET works like a typical metal-oxide-semiconductor device. The source region of the MOSFET is supplied with a voltage, and electrons are repelled from the source region to the drain region through the floating gate.The drain region is typically connected to the external circuit, and the voltage on the gate and source regions determines the current flowing through the device. When the voltage on the gate is higher than the source voltage, the current that flows is referred to as the linear region. The linear region is the most commonly used mode of operation for the AOWF12N60 MOSFET.At higher gate voltages, the device enters the saturation region, in which the current flowing is much higher than in the linear region. The MOSFET can also be used in the depletion mode, in which the current flow is much lower than in the linear or saturation modes. In the depletion mode, the MOSFET acts like a resistor and can be used to control the current flow.The AOWF12N60 MOSFET has several advantages over other transistors, such as higher current ratings, higher switching speeds, and better protection against ESD. The MOSFET also has very low power losses and can be used in very demanding applications.Overall, the AOWF12N60 MOSFET is an excellent choice for a wide variety of applications, from motor control to power supply design and power control. It is a versatile device that can be used in many applications, from low voltage/low power to high voltage/high power.
The specific data is subject to PDF, and the above content is for reference
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