Allicdata Part #: | 785-1530-5-ND |
Manufacturer Part#: |
AOWF25S65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 25A TO262F |
More Detail: | N-Channel 650V 25A (Tc) 28W (Tc) Through Hole |
DataSheet: | AOWF25S65 Datasheet/PDF |
Quantity: | 1000 |
Series: | aMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26.4nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1278pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Full Pack, I²Pak |
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The AOWF25S65 is a Toshiba-made MOSFET that is suitable for use in a wide range of devices. It is a single drain-source, enhancement –mode transistor with a maximum rated channel-drain source voltage of 25 volts and a maximum channel-source on-state resistance of 6.5 ohms. This MOSFET is constructed using the advanced Field Oxide Isolation process, and comes in a TO-220 package. The AOWF25S65 is capable of handling peak currents up to 7 A and offers excellent temperature derating capabilities, making it ideal for applications that require high-power efficiency and reliability.
The AOWF25S65 is mainly used for switching and modulation applications that require low on-state resistance and high side-channel performance. Other common uses for this MOSFET include the control of solenoids and relays, the powering of DC motors, and the inversion of DC signals. It is also an effective component for protection and switching circuits, such as those found in power supplies, controllers, and automotive systems.
The AOWF25S65 works by controlling the amount of electric current that flows from the drain to the source. In an on-state, the MOSFET provides a low-resistance path for currents to flow, while in an off-state, the electric current is blocked. This is achieved by manipulating the electric fields formed around the gate. Essentially, when a positive voltage is applied to the gate, it creates an electric field which attracts negatively-charged carriers (electrons) to the channel. This increases the electric current flowing through the channel, and thus allows the MOSFET to act as an efficient switch.
The AOWF25S65 also operates as a linear amplifier by controlling the gate voltage in order to vary the on-state resistance of the channel. When the gate voltage increases, the resistance of the channel decreases, increasing the current flowing through the drains and sources. Conversely, when the gate voltage decreases, the resistance of the channel increases, decreasing the current flowing through the drains and sources.
In summary, the AOWF25S65 is a single drain-source, enhancement-mode transistor with excellent temperature derating capabilities and high side-channel performance. It is mainly used for switching and modulation applications, such as the control of solenoids and relays, the powering of DC motors, and the inversion of DC signals, as well as for protection and switching circuits. The AOWF25S65 works by manipulating electric fields, which can be used to effectively control the current flowing through the channel.
The specific data is subject to PDF, and the above content is for reference
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