Allicdata Part #: | AOWF9N70-ND |
Manufacturer Part#: |
AOWF9N70 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 700V 9A TO262F |
More Detail: | N-Channel 700V 9A (Tc) 28W (Tc) Through Hole |
DataSheet: | AOWF9N70 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.58231 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1630pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOWF9N70 is a power field effect transistor (FET) designed for use in high speed switching applications. It is a powerful and reliable device for applications that require a great deal of power in a small amount of space. This transistor is often used in power management, telecommunication, and automotive applications, and is also suitable for audio and DC/DC applications.
A FET is a type of transistor that is used in electronic circuits in order to control current flow. Unlike a conventional bipolar junction transistor (BJT), a FET requires only very small electrical signals in order to control the flow of energy. The AOWF9N70 is a MOSFET, or metal oxide semiconductor FET, which has two terminals, or gates, that are often referred to as "source" and "drain." The source is the negative side of the FET, and the drain is the positive side.
The AOWF9N70 is a N-channel MOSFET, which means that it relies on the flow of electrons through the gate in order to be able to control the flow of current. The AOWF9N70 has a VDSS rating of 70 volts, which makes it suitable for a wide range of current and voltage requirements. It also has a drain-source resistance of 0.012 Ω and a current limit of 9.5 A.
The AOWF9N70 is a very popular choice for many applications due to its high power density, small size, and fast switching speed. It is often used in applications such as motor drive applications, power switching, battery management, and solar power management. It also finds use in many audio, DC/DC, and other high-speed switching applications.
The AOWF9N70 is a versatile device that is capable of operating at frequencies of up to 500 kHz. The FET is particularly well-suited to applications where high-speed switching is required, as it is able to turn on and off in microseconds. The AOWF9N70 is also designed to be able to handle high voltages and currents, and it offers great protection against overdriving and overvoltage.
The AOWF9N70 is a high-performance FET that is an excellent choice for high-speed switching applications. Its small size and powerful capabilities make it an ideal choice for a wide range of projects and applications. Its ability to handle high voltages and currents make it a great choice for many different applications, and its fast switching speed makes it a good choice for many audio, DC/DC and other high speed applications.
The specific data is subject to PDF, and the above content is for reference
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