| Allicdata Part #: | AOWF10N65-ND |
| Manufacturer Part#: |
AOWF10N65 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 650V 10A TO262F |
| More Detail: | N-Channel 650V 10A (Tc) 25W (Tc) Through Hole |
| DataSheet: |  AOWF10N65 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-262-3 Full Pack, I²Pak |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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AOWF10N65 is a powerful enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed and manufactured for low voltage, low frequency operation in an array of applications including power supply, switching and RF amplifiers.The AOWF10N65 is a n-channel MOSFET with a drain-source breakdown voltage of 65 volts. Its package size is small enough that it can often fit into tight spaces. It also has a low gate threshold voltage, meaning that it can easily switch between conducting and non-conducting states. This makes it a popular choice for many switching and power-management applications.The AOWF10N65 is capable of handling high power demands. It has a maximum drain-source current of 15 amps, a maximum drain-source voltage of 65 volts and a maximum gate-drain voltage of ±35 volts. This means that it can be used to drive large loads, as well as more delicate loads that require precise voltage control.The AOWF10N65 also has good thermal properties, meaning that it can handle large currents and high voltages for extended periods of time. It has a high drain-source breakdown temperature of 150 °C, meaning that it can be used in high-temperature environments.The AOWF10N65 can be used in many different application fields. It is commonly used in battery management systems and electric vehicle systems, as well as in audio and radiofrequency amplifiers. It has a high speed, making it suitable for switching applications, as well as in communication systems that require high data rates.The AOWF10N65 works by controlling the flow of current between the drain and source terminals. When a voltage is applied to the gate terminal, it creates a electric field which then controls the conductivity of the MOSFET. This means that the amount of current flowing between the drain and source terminals can be accurately and precisely controlled by changing the voltage applied to the gate terminal.In summary, the AOWF10N65 is a powerful n-channel MOSFET. It is capable of handling high power demands, has a low gate threshold voltage and a high drain-source breakdown temperature. It is often used in battery management systems, electric vehicle systems, audio and radiofrequency amplifiers and communication systems. Finally, its working principle is based on the control of the flow of current between the drain and source terminals by a voltage applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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