AOWF11S65 Allicdata Electronics
Allicdata Part #:

785-1528-5-ND

Manufacturer Part#:

AOWF11S65

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 650V 11A TO262F
More Detail: N-Channel 650V 11A (Tc) 28W (Tc) Through Hole
DataSheet: AOWF11S65 datasheetAOWF11S65 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Rds On (Max) @ Id, Vgs: 399 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V
FET Feature: --
Power Dissipation (Max): 28W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Series: aMOS™
Packaging: Tube 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Description

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The AOWF11S65 is an advanced high power field effect transistor (FET). It is a single junction, low voltage FET with a maximum drain current capacity of 500 A. This FET helps to power components, circuits and systems that require a high power output in order to function properly. This FET is utilized in many applications and can be used to design circuits, inefficiencies and power systems. This article will discuss the application field and working principle of the AOWF11S65 FET.

In terms of application field, the AOWF11S65 is typically used in high power electronic components, such as motor drive applications, solar panels, electric vehicles, and the automotive industry. With its high power capabilities, the AOWF11S65 FET can help reduce design complexity, cost, and size for these types of systems. It is also commonly used for power inverter circuits, DC/DC converters, UPS power supplies, and energy storage systems. This FET can also be used in applications that require a low voltage operation, as it only requires a maximum gate-drain voltage of 8 volts.

The working principle of the AOWF11S65 FET is relatively simple. This FET works by using an external electric source to control the flow of electricity through it. When a voltage is applied to the gate of the FET, a current is created. This current allows electrical current to flow between the drain and source terminal, depending on the voltage applied. This type of FET is typically used in circuits that require only a small current to be able to control a larger current, allowing them to quickly turn on and off when required.

In conclusion, the AOWF11S65 is a single junction, low voltage FET with a maximum drain current capacity of 500 A. It is commonly used in high power electronic components, motor drive applications, solar panels, electric vehicles, and the automotive industry. Additionally, it is used in power inverter circuits, DC/DC converters, UPS power supplies, and energy storage systems. The working principle of this FET is fairly simple, as it utilizes an external electric source to control the flow of electricity through it. This FET helps to reduce cost, size, and complexity in design for high power circuits, and can be used to quickly turn on and off when required.

The specific data is subject to PDF, and the above content is for reference

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